Datasheet > MMBV2103LT1

MMBV2103LT1

更新时间： 2024-09-28 22:27:59

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
3页	62K
描述
Silicon Tuning Diode

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中文翻译

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技术参数
数据手册

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MMBV2103LT1 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.75	Is Samacsys：	N
标称二极管电容：	10 pF	二极管类型：	VARIABLE CAPACITANCE DIODE
最大重复峰值反向电压：	30 V	子类别：	Varactors
表面贴装：	YES	Base Number Matches：	1

MMBV2103LT1 数据手册

LESHAN RADIO COMPANY, LTD.

MMBV2101LT1

MMBV2103LT1

MMBV2105LT1

Silicon Tuning Diode

These devices are designed in the popular PLASTIC PACKAGE for

high volumerequirements of FM Radio and TV tuning and AFC, general

frequency control andtuning applications.They provide solid–state reliability

in replacement of mechanical tuning methods. Also available in Surface

Mount Package up to 33pF.

MMBV2107LT1

MMBV2108LT1

MMBV2109LT1

MV2101 MV2104

MV2106 MV2108

MV2109 MV2111

MV2115

• High Q

• Controlled and Uniform Tuning Ratio

• Standard Capacitance Tolerance —10%

• Complete Typical Design Curves

6.8-100p

30 VOLTS

ANODE

CATHODE

VOLTAGE VARIABLE

CAPACITANCE DIODES

CASE 318–08, STYLE 8

SOT– 23 (TO–236AB)

MAXIMUM RATINGS(EACH DIODE)

Rating

Reverse Voltage

Forward Current

Symbol

V _R

MV21XX MMBV21XXLT1 Unit

Vdc

I _F

200

mAdc

m W

mW/°C

°C

_A= 25°C

P _D

280

2.8

225

1.8

Forward power Dissipation @T

Derate above 25°C

Junction Temperature

Storage Temperature Range

DEVICE MARKING

T _J

+150

T _stg

–55 to +150

°C

MMBV2101LT1=M4G

MMBV2103LT1=4H

MMBV2105LT1=4U

MMBV2107LT1=4W

MMBV2108LT1=4X

MMBV2109LT1=4J

ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)

Characteristic

Reverse Breakdown Voltage

(I_R=1.0µAdc)

Symbol

Min

Typ

Max

Unit

V _(BR)R

—

Vdc

Reverse Voltage Leakage Current

(V_R=25Vdc,T_A=25°C)

I_R

—

0.1

—

µAdc

Diode Capacitance Temperature Coefficient

(V_R=4.0Vdc,f=1.0MHz)

TC_C

280

ppm/°C

MMBV2101~MMBV2109

MV2101~MV2115

–1/3

12 3

中文翻译

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与MMBV2103LT1相关器件

型号	品牌	获取价格	描述	数据表
MMBV2103LT3	MOTOROLA	获取价格	HF-UHF BAND, 10pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC, CASE 318-08,
MMBV2105L	ONSEMI	获取价格	Silicon Tuning Diodes
MMBV2105L	MOTOROLA	获取价格	Variable Capacitance Diode, High Frequency to Ultra High Frequency, 15pF C(T), 30V, Silico
MMBV2105LT1	ETL	获取价格	Silicon Tuning Diode
MMBV2105LT1	ONSEMI	获取价格	Silicon Tuning Diodes
MMBV2105LT1	LRC	获取价格	Silicon Tuning Diode
MMBV2105LT1G	ONSEMI	获取价格	Silicon Tuning Diodes
MMBV2105LT3	MOTOROLA	获取价格	HF-UHF BAND, 15pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC, CASE 318-08,
MMBV2107L	ONSEMI	获取价格	Silicon Tuning Diodes
MMBV2107LT1	ETL	获取价格	Silicon Tuning Diode