是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOT-23 |
包装说明: | R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.83 |
其他特性: | HIGH Q, HIGH RELIABILITY | 最小击穿电压: | 30 V |
配置: | SINGLE | 二极管电容容差: | 10% |
最小二极管电容比: | 2.5 | 标称二极管电容: | 22 pF |
二极管元件材料: | SILICON | 二极管类型: | VARIABLE CAPACITANCE DIODE |
频带: | HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | NOT SPECIFIED | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 最大功率耗散: | 0.225 W |
认证状态: | COMMERCIAL | 最小质量因数: | 350 |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 变容二极管分类: | ABRUPT |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBV2107LT1G | ONSEMI |
获取价格 |
Silicon Tuning Diodes | |
MMBV2107LT3 | MOTOROLA |
获取价格 |
HF-UHF BAND, 22pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC, CASE 318-08, | |
MMBV2108LT1 | ETL |
获取价格 |
Silicon Tuning Diode | |
MMBV2108LT1 | ONSEMI |
获取价格 |
Silicon Tuning Diodes | |
MMBV2108LT1 | LRC |
获取价格 |
Silicon Tuning Diode | |
MMBV2108LT1G | ONSEMI |
获取价格 |
Silicon Tuning Diodes | |
MMBV2109L | ONSEMI |
获取价格 |
Silicon Tuning Diodes | |
MMBV2109L | MOTOROLA |
获取价格 |
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silico | |
MMBV2109LT1 | MOTOROLA |
获取价格 |
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silico | |
MMBV2109LT1 | ETL |
获取价格 |
Silicon Tuning Diode |