Datasheet > MMBV109LT1

MMBV109LT1

更新时间： 2024-09-28 22:26:07

品牌	Logo	应用领域
乐山 - LRC		二极管
页数	文件大小	规格书
2页	146K
描述
Silicon Epicap Diode

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数据手册

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MMBV109LT1 数据手册

LESHAN RADIO COMPANY, LTD.

Silicon Epicap Diode

MMBV109LT1

MBV109T1

MV209

26–32 pF

VOLTAGE VARIABLE

CAPACITANCE DIODES

Designed for general frequency control and tuning applications;

providing solid–state reliability in replacement of mechanical tuning

methods.

• High Q with Guaranteed Minimum Values at VHF Frequencies

• Controlled and Uniform Tuning Ratio

• Available in Surface Mount Package

ANODE

CATHODE

CASE 318–08, STYLE 6

SOT– 23 (TO–236AB)

MAXIMUMRATINGS

Rating

Symbol

Value

MMBV109LT1

Unit

MBV109T1

MV209

Reverse Voltage

Forward Current

V _R

I _F

Vdc

mAdc

200

Device Dissipation

@T _A= 25°C

P _D

280

2.8

200

2.0

+125

200

1.6

mW/°C

°C

Derate above 25°C

Junction Temperature

Storage Temperature Range

DEVICEMARKING

T _J

T _stg

–55 to +150

°C

MBV109T1= J4A, MMBV109LT1 =M4A, MV209 = MV209

ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)

Characteristic

Reverse Breakdown Voltage

( I _R= 10 µ Adc)

Symbol

Min

Typ

Max

Unit

V _(BR)R

—

Vdc

Reverse Voltage Leakage Current

( V _R= 25Vdc)

Diode Capacitance Temperature Coefficient

(V _R= 3.0 Vdc, f = 1.0 MHz)

I _R

—

0.1

—

mAdc

TC _C

300

ppm/°C

Q, Figure of

Merit

C_R,Capacitance

Ratio

C _TDiode Capacitance

V_R=3.0Vdc, f =1.0MHz

V _R= 3.0Vdc

f = 50MHz

C₃/ C ₂₅

f=1.0MHz (Note 1)

Device Type

Min

Nom

Max

Min

200

Min

5.0

Max

6.5

MBV109T1, MMBV109LT1, MV209

1. C _Ris the ratio of C _tmeasured at 3 V dc divided by C _tmeasured at 25 Vdc.

MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.

MBV109. MMBV109*. MV209*–1/2

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