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MMBV2101 PDF预览

MMBV2101

更新时间: 2024-09-28 22:27:59
品牌 Logo 应用领域
乐山 - LRC 二极管
页数 文件大小 规格书
3页 62K
描述
Silicon Tuning Diode

MMBV2101 数据手册

 浏览型号MMBV2101的Datasheet PDF文件第2页浏览型号MMBV2101的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
MMBV2101LT1  
MMBV2103LT1  
MMBV2105LT1  
Silicon Tuning Diode  
These devices are designed in the popular PLASTIC PACKAGE for  
high volumerequirements of FM Radio and TV tuning and AFC, general  
frequency control andtuning applications.They provide solid–state reliability  
in replacement of mechanical tuning methods. Also available in Surface  
Mount Package up to 33pF.  
MMBV2107LT1  
MMBV2108LT1  
MMBV2109LT1  
MV2101 MV2104  
MV2106 MV2108  
MV2109 MV2111  
MV2115  
High Q  
Controlled and Uniform Tuning Ratio  
Standard Capacitance Tolerance 10%  
Complete Typical Design Curves  
6.8-100p  
30 VOLTS  
1
3
ANODE  
CATHODE  
VOLTAGE VARIABLE  
CAPACITANCE DIODES  
3
1
2
CASE 318–08, STYLE 8  
SOT– 23 (TO–236AB)  
MAXIMUM RATINGS(EACH DIODE)  
Rating  
Reverse Voltage  
Forward Current  
Symbol  
V R  
MV21XX MMBV21XXLT1 Unit  
30  
Vdc  
I F  
200  
mAdc  
m W  
mW/°C  
°C  
A = 25°C  
P D  
280  
2.8  
225  
1.8  
Forward power Dissipation @T  
Derate above 25°C  
Junction Temperature  
Storage Temperature Range  
DEVICE MARKING  
T J  
+150  
T stg  
–55 to +150  
°C  
MMBV2101LT1=M4G  
MMBV2103LT1=4H  
MMBV2105LT1=4U  
MMBV2107LT1=4W  
MMBV2108LT1=4X  
MMBV2109LT1=4J  
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)  
Characteristic  
Reverse Breakdown Voltage  
(IR=1.0µAdc)  
Symbol  
Min  
Typ  
Max  
Unit  
V (BR)R  
30  
Vdc  
Reverse Voltage Leakage Current  
(VR=25Vdc,TA=25°C)  
IR  
0.1  
µAdc  
Diode Capacitance Temperature Coefficient  
(VR=4.0Vdc,f=1.0MHz)  
TCC  
280  
ppm/°C  
MMBV2101~MMBV2109  
MV2101~MV2115  
–1/3  

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