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MMBTA43

更新时间: 2024-11-13 10:52:27
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管光电二极管放大器
页数 文件大小 规格书
1页 566K
描述
TRANSISTOR(NPN)

MMBTA43 数据手册

  
MMBTA43  
TRANSISTOR(NPN)  
SOT23  
FEATURES  
High Voltage Application  
Telephone Application  
Complementary to MMBTA93  
MARKING:ABX  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
200  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
200  
V
5
Collector Current  
500  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
350  
PC  
RΘJA  
Tj  
357  
150  
Storage Temperature  
Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
Typ  
Max  
Unit  
V
V(BR)CBO IC=0.1mA, IE=0  
V(BR)CEO IC=1mA, IB=0  
V(BR)EBO IE=0.1mA, IC=0  
200  
200  
5
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
V
V
hFE(1)  
hFE(2)  
hFE(3)  
*
*
*
VCE=10V, IC=10mA  
VCE=10V, IC=1mA  
40  
40  
40  
DC current gain  
VCE=10V, IC=30mA  
IC=20mA, IB=2mA  
VCE(sat)  
VBE(sat)  
fT  
*
0.5  
0.9  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
*
IC=20mA, IB=2mA  
VCE=20V,IE=10mA, f=100MHz  
VCB=20V, IE=0, f=1MHz  
50  
MHz  
pF  
Cob  
4
Collector output capacitance  
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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