Datasheet > MMBTA43L99Z

MMBTA43L99Z

更新时间： 2024-09-25 14:53:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器光电二极管晶体管
页数	文件大小	规格书
3页	29K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon

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技术参数
数据手册

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MMBTA43L99Z 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.69	Is Samacsys：	N
最大集电极电流 (IC)：	0.2 A	集电极-发射极最大电压：	200 V
配置：	SINGLE	最小直流电流增益 (hFE)：	50
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	50 MHz
Base Number Matches：	1

MMBTA43L99Z 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

MPSA43

MMBTA43

TO-92

SOT-23

Mark: 1E

NPN High Voltage Amplifier

This device is designed for application as a video output to

drive color CRT and other high voltage applications. Sourced

from Process 48. See MPSA42 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CES

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

200

6.0

Collector Current - Continuous

200

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSA43

*MMBTA43

P_D

Total Device Dissipation

625

5.0

350

2.8

mW/ C

Derate above 25 C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

357

R_θ

C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

ã 1997 Fairchild Semiconductor Corporation

12 3

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