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MMBTA43LT1G PDF预览

MMBTA43LT1G

更新时间: 2024-09-25 10:52:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
6页 85K
描述
High Voltage Transistors

MMBTA43LT1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:TO-236, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.23Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MMBTA43LT1G 数据手册

 浏览型号MMBTA43LT1G的Datasheet PDF文件第2页浏览型号MMBTA43LT1G的Datasheet PDF文件第3页浏览型号MMBTA43LT1G的Datasheet PDF文件第4页浏览型号MMBTA43LT1G的Datasheet PDF文件第5页浏览型号MMBTA43LT1G的Datasheet PDF文件第6页 
MMBTA42LT1G,  
MMBTA43LT1G  
High Voltage Transistors  
NPN Silicon  
http://onsemi.com  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
COLLECTOR  
3
Compliant  
1
BASE  
MAXIMUM RATINGS  
2
Characteristic  
Symbol  
Value  
Unit  
EMITTER  
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
MMBTA42  
MMBTA43  
300  
200  
3
CollectorBase Voltage  
EmitterBase Voltage  
Vdc  
Vdc  
MMBTA42  
MMBTA43  
300  
200  
1
2
MMBTA42  
MMBTA43  
6.0  
6.0  
SOT23 (TO236)  
CASE 318  
STYLE 6  
Collector Current Continuous  
I
C
500  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
MARKING DIAGRAMS  
Total Device Dissipation FR5 Board  
P
D
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
1D M G  
M1E M G  
G
G
Thermal Resistance, JunctiontoAmbient  
R
556  
°C/W  
q
JA  
1
1
Total Device Dissipation Alumina  
P
D
Substrate (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
1D = MMBTA42LT  
M1E = MMBTA43LT  
M
Thermal Resistance, JunctiontoAmbient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
= Date Code*  
= PbFree Package  
T , T  
J
55 to +150  
stg  
G
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 x 0.75 x 0.062 in.  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
June, 2011 Rev. 10  
MMBTA42LT1/D  
 

MMBTA43LT1G 替代型号

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