Datasheet > MMBTA44

MMBTA44

更新时间： 2024-09-25 10:52:27

品牌	Logo	应用领域
KEC		晶体晶体管开关光电二极管 IOT 局域网
页数	文件大小	规格书
2页	319K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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MMBTA44 数据手册

SEMICONDUCTOR

MMBTA44

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

HIGH VOLTAGE APPLICATION.

FEATURES

High Breakdown Voltage.

Collector Power Dissipation : P_C=350mW.

MAXIMUM RATING (Ta=25

)

CHARACTERISTIC

Collector-BaseVoltage

Collector-EmitterVoltage

Emitter-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

450

UNIT

400

Collector Current

300

P_C*

Collector Power Dissipation

Junction Temperature

350

T_j

150

T_stg

Storage Temperature Range

-55 150

* : Package Mounted On 99.5% Alumina 10

0.6mm.

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector-Emitter Breakdown Voltage (2)

Emitter-Base Breakdown Voltage

Collector Cut off Current

SYMBOL

V_(BR)CBO

V_(BR)CEO

V_(BR)CES

V_(BR)EBO

I_CBO

TEST CONDITION

MIN.

TYP.

MAX. UNIT

I_C=100 A, I_E=0

450

400

450

6.0

I_C=1mA, I_B=0

I_C=100 A, I_B=0

I_E=10 A, I_C=0

V_CB=400V, I_E=0

100

500

100

I_CES

V_CE=400V, I_B=0

Collector Cut off Current

I_EBO

V_EB=4V, I_C=0

Emitter Cutoff Current

V_CE=10V, I_C=1mA

V_CE=10V, I_C=10mA

V_CE=10V, I_C=50mA

V_CE=10V, I_C=100mA

I_C=1mA, I_B=0.1mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

I_C=10mA, I_B=1mA

V_CE=10V, I_C=10mA, f=10MHz

V_CB=20V, I_E=0, f=1MHz

V_EB=0.5V, I_C=0, f=1MHz

200

h_FE

DC Current Gain

V_CE(sat)

0.4

0.5

0.75

Collector-Emitter Saturation Voltage

V_BE(sat)

f_T

Base-Emitter Saturation Voltage

Transition Frequency

MHz

C_ob

Collector Output Capacitance

Input Capacitance

C_ib

130

*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%

2008. 3. 10

Revision No : 2

1/2

中文翻译

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