Datasheet > MMBTA45

MMBTA45

更新时间： 2024-01-28 04:56:33

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1224K
描述
NPN Transistors

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技术参数
数据手册

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MMBTA45 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.61	Is Samacsys：	N
最大集电极电流 (IC)：	0.3 A	配置：	Single
最小直流电流增益 (hFE)：	40	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	1.5 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	50 MHz	Base Number Matches：	1

MMBTA45 数据手册

SMD Type

Transistors

NPN Transistors

MMBTA45 (KMBTA45)

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High Collector-Emitter Voltage

● Complement to MMBTA93

+0.1

+0.05

-0.01

0.95

-0.1

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

400

Unit

Collector - Base Voltage

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

350

Collector Current - Continuous

Collector Current -Pulsed

200

300

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

350

RθJA

357

℃/W

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA， I = 0

= 100μA， I = 0

CB= 400 V , I = 0

EB= 4V , I =0

Min

400

350

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage *1

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

100

0.2

CE(sat)1

CE(sat)2

=10 mA, I

=50 mA, I

=10 mA, I

CE= 10V, I

^CB= 20V, I

=1mA

=5mA

=1mA

Collector-emitter saturation voltage *1

Base - emitter saturation voltage *1

0.3

BE(sat)

0.75

FE(1)

FE(2)

FE(3)

FE(4)

= 1mA

= 10mA

= 50mA

= 100mA

300

DC current gain *1

Collector output capacitance

Transition frequency

Cob

= 0,f=1MHz

VCE=20, I

C= 10mA,f=30MHz

MHz

*1: Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

■ Classification of hfe(2)

Type

Range

Marking

MMBTA45

MMBTA45-L

100-200

80-300

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