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MMBTA44

更新时间: 2024-01-13 08:55:06
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管开关光电二极管IOT
页数 文件大小 规格书
1页 697K
描述
TRANSISTOR(NP)

MMBTA44 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.18
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MMBTA44 数据手册

  
MMBTA44  
TRANSISTOR(NP)  
SOT23  
FEATURES  
High Collector-Emitter Voltage  
Complement to MMBTA94  
MARKING: 3D  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
V
VCBO  
Collector-Base Voltage  
500  
V
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
400  
6
Collector Current  
100  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
350  
PC  
RΘJA  
Tj  
357  
150  
Storage Temperature  
Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
Typ  
Max  
Unit  
V(BR)CBO  
IC=100µA, IE=0  
500  
400  
6
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CEO  
V(BR)EBO  
ICBO  
*
IC=1mA, IB=0  
V
V
IE=10µA, IC=0  
VCB=400V, IE=0  
0.1  
0.1  
µA  
µA  
IEBO  
VEB=4V, IC=0  
Emitter cut-off current  
hFE(1)  
hFE(2)  
hFE(3)  
hFE(4)  
*
*
*
*
VCE=10V, IC=1mA  
VCE=10V, IC=10mA  
VCE=10V, IC=50mA  
VCE=10V, IC=100mA  
IC=1mA, IB=0.1mA  
IC=10mA, IB=1mA  
IC=50mA, IB=5mA  
IC=10mA, IB=1mA  
VCB=20V, IE=0, f=1MHz  
VEB=0.5V, IC=0, f=1MHz  
40  
50  
45  
40  
200  
DC current gain  
VCE(sat)1  
VCE(sat)2  
VCE(sat)3  
*
*
*
0.4  
0.5  
0.75  
0.75  
7
V
V
Collector-emitter saturation voltage  
V
VBE(sat)  
*
V
Base-emitter saturation voltage  
Collector output capacitance  
Emitter input capacitance  
Cob  
pF  
pF  
Cib  
130  
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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