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MMBTA43LT1 PDF预览

MMBTA43LT1

更新时间: 2024-11-04 22:54:39
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管高压
页数 文件大小 规格书
3页 101K
描述
High Voltage Transistors(NPN Silicon)

MMBTA43LT1 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.27Is Samacsys:N
最大集电极电流 (IC):0.5 A配置:Single
最小直流电流增益 (hFE):25最高工作温度:150 °C
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:YES处于峰值回流温度下的最长时间:NOT SPECIFIED
标称过渡频率 (fT):50 MHzBase Number Matches:1

MMBTA43LT1 数据手册

 浏览型号MMBTA43LT1的Datasheet PDF文件第2页浏览型号MMBTA43LT1的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
HighVoltageTransistors  
NPN Silicon  
3
MMBTA42LT1  
COLLECTOR  
MMBTA43LT1  
1
BASE  
3
2
EMITTER  
MAXIMUM RATINGS  
Value  
1
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
MMBTA42 MMBTA43  
Unit  
2
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
300  
300  
6.0  
200  
200  
6.0  
Vdc  
Vdc  
CASE 318–08, STYLE 6  
SOT–23 (TO–236AB)  
Vdc  
500  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
P D  
225  
1.8  
mW  
mW/°C  
°C/W  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R θJA  
P D  
556  
300  
2.4  
mW  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
mW/°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
417  
°C/W  
°C  
T J , T stg  
–55 to +150  
DEVICE MARKING  
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage(3)  
V (BR)CEO  
Vdc  
(I C = 1.0 mAdc, I B = 0)  
MMBTA42  
300  
200  
MMBTA43  
Emitter–Base Breakdown Voltage  
V (BR)CBO  
Vdc  
(I C= 100 µAdc, I E= 0)  
MMBTA42  
MMBTA43  
300  
200  
Emitter–Base Breakdown Voltage  
(I E= 100 µAdc, I C= 0)  
V (BR)EBO  
I CBO  
6.0  
Vdc  
Collector Cutoff Current  
( V CB= 200Vdc, I E= 0)  
( V CB= 160Vdc, I E= 0)  
Emitter Cutoff Current  
( V EB= 6.0Vdc, I C= 0)  
µAdc  
MMBTA42  
MMBTA43  
0.1  
0.1  
I EBO  
µAdc  
MMBTA42  
MMBTA43  
0.1  
0.1  
( V EB= 4.0Vdc, I C= 0)  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
3. Pulse Test: Pulse Width 300 µs, Duty Cycle <2.0%.  
<
M28–1/3  

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