MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
http://onsemi.com
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
3
Collector−Emitter Voltage
V
CEO
Vdc
MMBTA42, SMMBTA42
MMBTA43
300
200
1
2
Collector−Base Voltage
V
Vdc
Vdc
CBO
SOT−23 (TO−236)
CASE 318
MMBTA42, SMMBTA42
MMBTA43
300
200
STYLE 6
Emitter−Base Voltage
V
EBO
MMBTA42, SMMBTA42
MMBTA43
6.0
6.0
MARKING DIAGRAMS
Collector Current − Continuous
I
C
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
1D M G
M1E M G
G
G
Total Device Dissipation FR−5 Board
P
D
1
1
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
1D = MMBTA42LT, SMMBTA42L
M1E = MMBTA43LT
q
JA
Total Device Dissipation Alumina
P
D
M
= Date Code*
Substrate (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
G
= Pb−Free Package
(Note: Microdot may be in either location)
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
q
417
°C/W
°C
JA
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T , T
J
−55 to +150
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 12
MMBTA42LT1/D