Datasheet > MMBTA42_08

MMBTA42_08

更新时间： 2024-02-19 11:11:49

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管高压
页数	文件大小	规格书
3页	102K
描述
NPN Silicon High Voltage Transistor

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中文翻译

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数据手册

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MMBTA42_08 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBTA42

Micro Commercial Components

Features

•

Surface Mount SOT-23 Package

NPN Silicon High

Voltage Transistor

Capable of 300mWatts of Power Dissipation

Continuous Collector Current : 300mA

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0 and MSL Rating 1

Marking:1D

Electrical Characteristics @ 25 C Unless Otherwise Specified

SOT-23

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage*

(I_C=1.0mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=100µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=100µAdc, I_C=0)

Collector Cutoff Current

(V_CB=200Vdc, I_E=0)

300

6.0

Vdc

0.1

uAdc

I_EBO

Emitter Cutoff Current

(V_E^B=6.0Vdc, I_C=0)

ON CHARACTERISTICS

h_FE

DC Current Gain*

DIMENSIONS

(I_C=1.0mAdc, V_CE=10Vdc)

(I_C=10mAdc, V_CE=10Vdc)

(I_C=30mAdc, V_CE=10Vdc)

INCHES

MIN

----

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

V_CE(sat)

Collector-Emitter Saturation Voltage

(I_C=20mAdc, I_B=2.0mAdc)

0.5

0.9

Vdc

.100

1.12

.180

.51

V_BE(sat)

Base-Emitter Saturation Voltage

(I_C=20mAdc, I_B=2.0mAdc)

.085

.37

SMALL-SIGNAL CHARACTERISTICS

Suggested Solder

Pad Layout

f_T

Current Gain-Bandwidth Product

(I_C=10mAdc, V_CE=20Vdc, f=100MHz)

MHz

C_cb

Collector-Emitter Capacitance

.031

.800

(V_CB=20Vdec, I_E=0, f=1.0MHz)

3.0

THERMAL CHARACTERISTICS

Characteristic

.035

.900

Symbol

Max

Unit

.079

2.000

inches

(1)

225

Total Device Dissipation FR–5 Board,

T = 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

.037

.950

Total Device Dissipation

Alumina Substrate, T = 25°C

Derate above 25°C

.037

.950

(2)

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

*Pulse Width ≤ 300µs, Duty Cycle≤ 2.0%

417

T , T

–55 to +150

stg

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Revision: 5

2008/01/01

12 3

中文翻译

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与MMBTA42_08相关器件

型号	品牌	获取价格	描述	数据表
MMBTA42_09	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MMBTA42_1	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA42_11	MCC	获取价格	NPN Silicon High Voltage Transistor
MMBTA42_15	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MMBTA42_2	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA42-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, PLASTI
MMBTA42-28CH-29	HDSEMI	获取价格	SOT-23 Plastic-Encapsulate Transistors
MMBTA42-3_15	KEXIN	获取价格	NPN Transistors
MMBTA42-7	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA42-7-F	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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