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MMBTA42_1 PDF预览

MMBTA42_1

更新时间： 2024-09-26 04:39:27
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 109K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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MMBTA42_1 数据手册

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SPICE MODEL: MMBTA42  
MMBTA42  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
•
•
Epitaxial Planar Die Construction  
Complementary PNP Type Available  
(MMBTA92)  
Ideal for Low Power Amplification and Switching  
Lead Free/RoHS Compliant (Note 4)  
A
SOT-23  
C
Dim  
A
B
C
D
E
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
•
•
•
B
C
TOP VIEW  
E
B
Qualified to AEC-Q101 Standards for High  
Reliability  
D
G
E
H
Mechanical Data  
•
•
K
Case: SOT-23  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Solderable per MIL-STD-202, Method  
208  
Lead Free Plating (Matte Tin Finish annealed  
over Alloy 42 leadframe).  
Marking (See Page 2): K3M  
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approximate)  
M
G
H
J
J
L
•
•
•
K
L
•
M
α
•
•
•
All Dimensions in mm  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Value  
Unit  
Collector-Base Voltage  
300  
V
V
CBO  
V
CEO  
V
EBO  
Collector-Emitter Voltage  
300  
6.0  
V
V
Emitter-Base Voltage  
Collector Current (Note 1) (Note 3)  
Power Dissipation (Note 1)  
500  
mA  
mW  
°C/W  
°C  
I
C
300  
P
d
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
417  
R
θJA  
-55 to +150  
T , T  
j
STG  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Base Breakdown Voltage  
Symbol  
Min  
Max  
Unit  
Test Condition  
300  
300  
6.0  
⎯
V
V
⎯
⎯
V
I
I
I
= 100μA, I = 0  
E
(BR)CBO  
(BR)CEO  
(BR)EBO  
C
C
E
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
V
V
= 1.0mA, I = 0  
B
V
⎯
= 100μA, I = 0  
C
Collector Cutoff Current  
100  
100  
nA  
nA  
I
V
= 200V, I = 0  
CB E  
CBO  
Collector Cutoff Current  
⎯
I
V
= 6.0V, I = 0  
CE C  
EBO  
ON CHARACTERISTICS (Note 2)  
I
I
= 1.0mA, V = 10V  
CE  
25  
40  
40  
C
DC Current Gain  
⎯
⎯
h
I
C
C
= 10mA, V = 10V  
FE  
CE  
=
30mA, V = 10V  
CE  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
0.5  
0.9  
V
V
⎯
⎯
V
V
I
I
= 20mA, I = 2.0mA  
B
CE(SAT)  
C
C
= 20mA, I = 2.0mA  
BE(SAT)  
B
3.0  
pF  
⎯
C
cb  
V
= 20V, f = 1.0MHz, I = 0  
CB E  
V
= 20V, I = 10mA,  
f = 100MHz  
CE  
C
Current Gain-Bandwidth Product  
50  
MHz  
⎯
f
T
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (R ), power  
JA  
θ
dissipation rating (P ) and power derating curve (figure 1).  
d
4. No purposefully added lead.  
DS30062 Rev. 10 - 2  
1 of 3  
MMBTA42  
© Diodes Incorporated  
www.diodes.com  
123

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