Datasheet > MMBTA42LT1

MMBTA42LT1

更新时间： 2024-11-13 10:52:27

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页数	文件大小	规格书
3页	29K
描述
NPN EPITACIAL PLANAR TRANSISTOR

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数据手册

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MMBTA42LT1 数据手册

TIGER ELECTRONIC CO.,LTD

MMBTA42LT1

NPN EPITACIAL PLANAR TRANSISTOR

Description

High Voltage Transistor

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................... -55~+150°C

Junction Temperature..................................................................................... +150°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... 300 V

VCEO Collector to Emitter Voltage.................................................................................... 300 V

VEBO Emitter to Base Voltage ........................................................................................... 6.0 V

IC Collector Current........................................................................................................ 500 mA

(Ta=25°C)

Characteristics

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min.

Typ.

Max.

Unit

Test Conditions

300

IC=100uA

IC=1mA

IE=10uA

VCB=200V

VEB=6V

100

500

900

IEBO

VCE(sat)

VBE(sat)

hFE1

hFE2

hFE3

IC=20mA, IB=2mA

IC=1mA, VCE=10V

IC=10mA, VCE=10V

IC=30mA, VCE=10V

IC=10mA, VCE=20V, f=100MHz

VCB=20V, f=1MHz

Cob

MHz

TIGER ELECTRONIC CO.,LTD

12 3

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