Datasheet > MMBTA42LT1G_10

MMBTA42LT1G_10

更新时间： 2024-09-27 10:52:27

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	103K
描述
High Voltage Transistors

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MMBTA42LT1G_10 数据手册

MMBTA42LT1G,

MMBTA43LT1G

High Voltage Transistors

NPN Silicon

http://onsemi.com

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

COLLECTOR

Compliant

BASE

MAXIMUM RATINGS

EMITTER

Characteristic

Symbol

Value

Unit

Collector−Emitter Voltage

CEO

CBO

EBO

Vdc

MMBTA42

MMBTA43

300

200

Collector−Base Voltage

Emitter−Base Voltage

Vdc

MMBTA42

MMBTA43

300

200

MMBTA42

MMBTA43

6.0

SOT−23 (TO−236)

CASE 318

STYLE 6

Collector Current − Continuous

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

MARKING DIAGRAMS

Total Device Dissipation FR−5 Board

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

1D M G

M1E M G

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation Alumina

556

°C/W

Substrate (Note 2) T = 25°C

300

2.4

mW/°C

Derate above 25°C

1D = MMBTA42LT

M1E = MMBTA43LT

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

°C/W

°C

= Date Code*

= Pb−Free Package

T , T

−55 to +150

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Publication Order Number:

July, 2010 − Rev. 9

MMBTA42LT1/D

12 3 4 5

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