Datasheet > MMBTA42-G

MMBTA42-G

更新时间： 2024-09-26 12:10:35

品牌	Logo	应用领域
上华 - COMCHIP		晶体晶体管
页数	文件大小	规格书
5页	193K
描述
General Purpose Transistor

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中文翻译

获取价格

数据手册

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MMBTA42-G 数据手册

General Purpose Transistor

MMBTA42-G (NPN)

RoHS Device

Features

-High breakdown voltage.

SOT-23

0.119(3.00)

0.110(2.80)

-Low collector-emitter saturation voltage.

-Ultra small surface mount package.

0.056(1.40)

0.047(1.20)

Diagram:

0.079(2.00)

0.071(1.80)

Collector

0.006(0.15)

0.003(0.08)

0.041(1.05)

0.035(0.90)

0.100(2.550)

0.089(2.250)

Base

0.004(0.10) max

0.020(0.50)

0.012(0.30)

Emitter

0.020(0.50)

0.012(0.30)

Dimensions in inches and (millimeter)

Maximum Ratings (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Collector-Base voltage

VCBO

VCEO

VEBO

300

Collector-Emitter voltage

Emitter-Base voltage

Collector current-Continuous

Collector current-peak

ICM

300

°C/W

°C

500

350

Collector power dissipation

Thermal resistance, junction to ambient

Junction temperature

RΘJA

357

150

Storage temperature

TSTG

-55 to +150

°C

Electrical Characteristics (Ta=25°C, unless otherwise specified)

Conditions

Symbol

Min

Max

Parameter

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

IC=100μA, IE=0

V(BR)CBO

V(BR)CEO

V(BR)EBO

300

IC=1mA, IB=0

IE=100μA, IC=0

VCB=200V, IE=0

VEB=5V, IC=0

μA

ICBO

IEBO

0.25

0.1

Emitter cut-off current

VCE=10V, IC=1mA

VCE=10V, IC=10mA

VCE=10V, IC=30mA

hFE(1)

hFE(2)

hFE(3)

100

DC current gain

200

Collector-emitter saturation voltage

Base-emitter saturation voltage

IC=20mA, IB=2mA

VCE(sat)

VBE(sat)

0.2

0.9

VCE=20V, IC=10mA

f=30MHz

Transition frequency

MHz

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

Page 1

QW-BTR38

Comchip Technology CO., LTD.

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中文翻译

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