Datasheet > MMBTA42LT1

MMBTA42LT1

更新时间： 2024-09-27 12:36:43

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
2页	163K
描述
NPN EPITAXIAL SILICON TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMBTA42LT1 数据手册

RoHS

M M B T A 4 2 L T 1

NPN EPITAXIAL SILICON TRANSISTOR

SOT-23

HIGH VOLTGE TRANDIDTOR

Complement to MMBTA92LT1

High Collector-Emitter Voltage:Vcbo=300V

Collector current:Ic=500mA

Collector Dissipation:Pc=225mW(Ta=25^oC)

1.BASE

2.EMITTER

2.4

1.3

3.COLLECTOR

Unit:mm

(Ta=25^oC)

ABSOLUTE MAXIMUM RATINGS

Symbol

Rating

Unit

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

EBO

300

Emitter-Base Voltage

Collector Current

500

Collector Dissipation Ta=25^oC*

Junction Temperature

Storage Temperature

225

^OC

150

stg

-55~150

(Ta=25^oC)

Electrical Characteristics

Characteristic

Symbol MIN. TYP.MAX. Unit

Condition

300

BVCBO

BVCEO

BVEBO

=100 A I

=1mA I =0

=100 A I =0

CB=200V, V =0

EB=6V, I =0

CE=10V, I =10mA

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage#

Emitter-Base Breakdown Voltage

Collector Cutoff Current

CBO

100

250

0.5

0.9

EBO

Collector Cutoff Current

DC Current Gain

CE(sat)

BE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

=20mA, I

=2mA

Collector-Base Capacitance

Current Gain-Bandwidth Product

CB=10V, I

CE=20V I

=0 f=1MHz

=10mA

MHz

f=100MHz

WEJ ELECTRONIC CO.,LTD

*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C

Pulse Test: Pulse Width 300uS Duty cycle 2%

DEVICE MARKING:

MMBTA42LT1=1D

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

下载PDF

与MMBTA42LT1相关器件

型号	品牌	获取价格	描述	数据表
MMBTA42LT1_07	ONSEMI	获取价格	High Voltage Transistor NPN Silicon
MMBTA42LT1G	ATMEL	获取价格	AT90USB1287 (AVR) 64 QFN device (2.7V VCC 5.5V)
MMBTA42LT1G	ONSEMI	获取价格	High Voltage Transistors
MMBTA42LT1G_10	ONSEMI	获取价格	High Voltage Transistors
MMBTA42LT1G_11	ONSEMI	获取价格	High Voltage Transistors
MMBTA42LT1HTSA1	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
MMBTA42LT1-TP	MCC	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, PLASTI
MMBTA42LT1XT	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
MMBTA42LT3	ONSEMI	获取价格	High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL
MMBTA42LT3G	ONSEMI	获取价格	High Voltage Transistors