Datasheet > MMBTA42-L

MMBTA42-L

更新时间： 2024-01-19 04:15:14

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1434K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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MMBTA42-L 数据手册

SMD Type

Transistors

NPN

Transistors

MMBTA42 ^(KMBTA42)

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High breakdown voltage

● Low collector-emitter saturation voltage

● Complementary to MMBTA92 (PNP)

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

300

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

300

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

500

℃/W

350

θJA

357

150

℃

Storage Temperature Range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA， I = 0

= 100 uA， I = 0

CB= 200 V , I = 0

EB= 5V , I =0

Min

300

Typ

Max

Unit

Collector-base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

CEO

EBO

CBO

EBO

0.1

0.2

0.9

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

= 20 mA, I

= 2mA

C= 20mA, I

CE= 10V, I

CE= 20V, I

= 1mA

= 10mA

= 30mA

100

hfe（1）

hfe（2）

hfe（3）

DC current gain

300

Transition frequency

= 10mA, f=30MHz

MHz

■ Classification of hfe(2)

Type

Range

Marking

MMBTA42

100-300

MMBTA42-L

100-200

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