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MMBTA42_2

更新时间： 2024-02-23 17:06:38
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 105K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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MMBTA42_2 数据手册

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MMBTA42  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
Epitaxial Planar Die Construction  
Complementary PNP Type Available (MMBTA92)  
Ideal for Low Power Amplification and Switching  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 4 and 5)  
Qualified to AEC-Q101 Standards for High  
Reliability  
A
SOT-23  
C
Dim  
A
B
C
D
E
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
B
C
TOP VIEW  
E
B
•
D
G
E
H
Mechanical Data  
•
•
K
M
Case: SOT-23  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
Marking (See Page 2): K3M  
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approximate)  
J
G
H
J
L
•
•
•
•
K
L
M
α
•
•
•
All Dimensions in mm  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Collector-Base Voltage  
Symbol  
Value  
300  
300  
6.0  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
V
Collector Current (Note 1) (Note 3)  
Power Dissipation (Note 1)  
500  
300  
mA  
mW  
I
C
P
d
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
417  
°C/W  
R
θJA  
-55 to +150  
°C  
T , T  
j
STG  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Base Breakdown Voltage  
Symbol  
Min  
Max  
Unit  
Test Condition  
300  
300  
6.0  
⎯
V
V
⎯
⎯
V
I
I
I
= 100μA, I = 0  
(BR)CBO  
(BR)CEO  
(BR)EBO  
C
C
E
E
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
V
V
= 1.0mA, I = 0  
B
V
⎯
= 100μA, I = 0  
C
100  
100  
nA  
nA  
I
V
= 200V, I = 0  
CB E  
CBO  
Collector Cutoff Current  
⎯
I
V
= 6.0V, I = 0  
CE C  
EBO  
ON CHARACTERISTICS (Note 2)  
I
I
= 1.0mA, V = 10V  
CE  
25  
40  
40  
C
DC Current Gain  
⎯
⎯
h
I
= 10mA, V = 10V  
FE  
C
CE  
=
30mA, V = 10V  
CE  
C
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
0.5  
0.9  
V
V
⎯
⎯
V
V
I
I
= 20mA, I = 2.0mA  
B
CE(SAT)  
C
C
= 20mA, I = 2.0mA  
BE(SAT)  
B
3.0  
pF  
⎯
C
cb  
V
= 20V, f = 1.0MHz, I = 0  
CB E  
V
= 20V, I = 10mA,  
f = 100MHz  
CE  
C
Current Gain-Bandwidth Product  
50  
MHz  
⎯
f
T
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RθJA), power  
dissipation rating (Pd) and power derating curve (figure 1).  
4. No purposefully added lead. Halogen and Antimony Free.  
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code  
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30062 Rev. 11 - 2  
1 of 3  
MMBTA42  
© Diodes Incorporated  
www.diodes.com  
123

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