Datasheet > MMBTA42-28CH-29

MMBTA42-28CH-29

更新时间： 2024-01-25 20:34:36

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	2427K
描述
SOT-23 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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MMBTA42-28CH-29 数据手册

MMBTA42

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NP N )

Features

SOT- 23

●

High breakdown voltage

Low collector-emitter saturation voltage

● Complementary to MMBTA92 (PNP)

Marking:

●

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

300

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

350

P_C

R_ΘJA

T_j

357

150

℃/W

℃

Storage Temperature

T_stg

-55～+150

℃

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C= 100μA,I_E=0

300

V_(BR)CEOI_C= 1mA, I_B=0

300

V_(BR)EBO

I_CBO

I_E= 100μA, I_C=0

V_CB=200V, I_E=0

0.25

0.1

μA

Emitter cut-off current

I_EBO

V_EB= 5V, I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE(sat)

V_CE= 10V, I_C= 1mA

V_CE= 10V, I_C=10mA

V_CE=10V, I_C=30mA

I_C=20mA, I_B= 2mA

100

DC current gain

200

Collector-emitter saturation voltage

Base-emitter saturation voltage

0.2

0.9

I_C= 20mA, I_B=2mA

V_CE= 20V, I_C= 10mA,

f=30MHz

Transition frequency

MHz

f_T

igh Diode Semiconductor

12 3 4

中文翻译

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