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MMBTA28 PDF预览

MMBTA28

更新时间: 2024-11-12 22:54:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管达林顿晶体管
页数 文件大小 规格书
4页 126K
描述
NPN Darlington Transistor

MMBTA28 数据手册

 浏览型号MMBTA28的Datasheet PDF文件第2页浏览型号MMBTA28的Datasheet PDF文件第3页浏览型号MMBTA28的Datasheet PDF文件第4页 
Discrete POWER & Signal  
Technologies  
MPSA28  
MMBTA28  
PZTA28  
C
C
E
E
C
B
TO-92  
C
B
SOT-23  
Mark: 3SS  
B
SOT-223  
E
NPN Darlington Transistor  
This device is designed for applications requiring extremely  
high current gain at collector currents to 500 mA. Sourced  
from Process 03.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCES  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
80  
80  
V
V
12  
V
Collector Current - Continuous  
800  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSA28  
*MMBTA28  
**PZTA28  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
1,000  
8.0  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
1997 Fairchild Semiconductor Corporation  

MMBTA28 替代型号

型号 品牌 替代类型 描述 数据表
MMBTA28 ONSEMI

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NPN 达林顿晶体管
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Tape: 3K/Reel , 120K/Ctn;