MMBTA28-TP-HF

更新时间： 2024-09-25 13:11:43

品牌	Logo	应用领域
美微科 - MCC		晶体小信号双极晶体管达林顿晶体管
页数	文件大小	规格书
4页	212K
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中文翻译

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数据手册

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MMBTA28-TP-HF 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBTA28

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

High Current Gain

NPN Surface Mount

Darlington Transistor

•

Ideal for Medium Power Amplification and Switching

Epitaxial Planar Die Construction

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking: 3SS

SOT-23

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage*

(I_C=1.0mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=100µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=100µAdc, I_C=0)

Collector Cutoff Current

(V_CB=60Vdc, I_E=0)

80.0

12.0

Vdc

100

I_EBO

Emitter Cutoff Current

(V_E^B=10Vdc, I_C=0)

ON CHARACTERISTICS

h_FE

DC Current Gain*

DIMENSIONS

(I_C=10mAdc, V_CE=5Vdc)

(I_C=100mAdc, V_CE=5Vdc)

10,000

INCHES

MIN

DIM

MAX

MIN

2.80

2.30

1.20

.89

1.78

.45

.013

.90

MAX

3.00

2.50

1.40

1.03

2.05

.60

.100

1.10

.180

.51

NOTE

.110

.090

.047

.035

.070

.018

.0005

.035

.003

.015

.118

.098

.055

.041

.081

.024

.0039

.043

.007

.020

V_CE(sat)

Collector-Emitter Saturation Voltage

(I_C=100mAdc, I_B=100uAdc)

1.5

2.0

Vdc

V_BE(sat)

Base-Emitter Saturation Voltage

(I_C=100mAdc,VCE=5.0v)

Vdc

.085

.37

SMALL-SIGNAL CHARACTERISTICS

Suggested Solder

Pad Layout

.031

.800

f_T

Current Gain-Bandwidth Product

(I_C=10mAdc, V_CE=5.0Vdc, f=100MHz)

Collector-Emitter Capacitance

(V_CB=10Vdec, I_E=0, f=1.0MHz)

125

MHz

C_cb

8.0

THERMAL CHARACTERISTICS

Characteristic

.035

.900

Symbol

Max

Unit

.079

2.000

Total Device Dissipation FR–5 Board,

T = 25°C

300

417

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

°C/W

°C

.037

.950

inches

T , T

–55 to +150

stg

.037

.950

www.mccsemi.com

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Revision: A

2011/01/01

12 3 4

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