Datasheet > MMBTA42

MMBTA42

更新时间： 2024-09-26 10:52:27

品牌	Logo	应用领域
SECOS		晶体晶体管光电二极管放大器 PC
页数	文件大小	规格书
2页	283K
描述
General Purpose Transistor

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MMBTA42 数据手册

MMBTA42

NPN Silicon

Elektronische Bauelemente

General Purpose Transistor

RoHS Compliant Product

FEATURES

A suffix of "-C" specifies halogen & lead-free

SOT-23

Min

Plastic-Encapsulate Transistors

Dim

Max

Power dissipation & Collector current

Pcm: 0.3W Icm: 0.3A

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

High voltage V(BR): 300V

COLLECTOR

Top View

BASE

EMITTER

All Dimension in mm

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

）

（

℃

Parameter

Symbol

Test

conditions

MIN

300

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic= 100

I_E=0

μ ，

I_B=0

I_C=0

(BR)CBO

Ic= 1 mA

，

(BR)CEO

I = 100

μ ，

(BR)EBO

I_CBO

V_CB=200 V , I_E=0

V_EB= 5V, I_C=0

0.25

0.1

Emitter cut-off current

I_EBO

H_FE（1）

V_CE= 10V, I_C= 1mA

V_CE= 10V, I_C=10mA

V_CE=10V, I_C=30mA

100

DC current gain

H_FE（2）

H_FE（3）

200

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat) I_C=20 mA, I_B= 2mA

0.2

0.9

V_BE(sat)

f_T

I_C= 20 mA, I_B=2mA

V_CE= 20V, I = 10mA

Transition frequency

MHz

f=30MHz

DEVICE MARKING

MMBTA42=1D

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-June-2004 Rev. B

Page 1 of 2

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