Datasheet > MMBTA42

MMBTA42

更新时间： 2024-09-26 04:39:27

品牌	Logo	应用领域
WEITRON		晶体晶体管光电二极管高压放大器 PC
页数	文件大小	规格书
4页	220K
描述
High-Voltage NPN Transistor Surface Mount

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中文翻译

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数据手册

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MMBTA42 数据手册

MMBTA42

COLLECTOR

High-Voltage NPN Transistor

Surface Mount

SOT-23

BASE

EMITTER

Maximum Ratings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base VOltage

Symbol

Value

Unit

Vdc

mAdc

300

5.0

CEO

CBO

EBO

Collector Current-Continuous

500

Thermal Characteristics

Characteristics

Symbol

Max

Unit

(1)

Total Device Dissipation FR-5 Board

225

1.8

TA=25 C

Derate above 25 C

mW/ C

C/W

Thermal Resistance, Junction to Ambient

556

300

Total Device Dissipation

(2)

Alumina Substrate,

Derate above 25 C

TA=25 C

2.4

mW/ C

C/W

Thermal Resistance, Junction to Ambient

Junction and Storage, Temperature

417

J,Tstg

-55 to +150

Device Marking

MMBTA42=1D

(TA=25 C Unless Otherwise noted)

Electrical Characteristics

Characteristics

Symbol

Unit

Min

Max

Off Characteristics

(3)

Collector-Emitter Breakdown Voltage (I =1.0mAdc.IB=0)

300

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

Collector-Base Breakdown Voltage (I =100 Adc, I =0)

Vdc

Emitter-Base Breakdown Voltage (I =10 Adc, I =0)

5.0

0.25

0.1

Base Cutoff Current (V =200 Vdc, I =0)

Adc

CBO

Emitter Cutoff Current V =3V, I =0

EBO

1.FR-5=1.0 x 0.75 x 0.062 in.

2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.

3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.

WEITRON

http://www.weitron,com.tw

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