Datasheet > MMBTA42

MMBTA42

更新时间： 2024-09-27 14:55:11

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1747K
描述
SOT-23

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中文翻译

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数据手册

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MMBTA42 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

MMBTA42 TRANSISTOR (NPN)

SOT-23

FEATURES

1. BASE

High breakdown voltage

2. EMITTER

Low collector-emitter saturation voltage

Complementary to MMBTA92 (PNP)

3. COLLECTOR

Marking: 1D

1D= Device code

Solid dot = Green molding compound device,

if none, the normal device.

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

300

Unit

Collector-Base Voltage

Equivalent Circuit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Current-Peak

0.3

I_CM

0.5

Collector Power dissipation

P_C

0.35

357

Thermal Resistance, junction to Ambient

Operation Junction and Storage Temperature Range

R_ӨJA

T_J,T_stg

℃/W

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

300

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C= 100μA,I_E=0

V_(BR)CEOI_C= 1mA, I_B=0

300

V_(BR)EBO

I_CBO

I_E= 100μA, I_C=0

V_CB=200V, I_E=0

0.25

0.1

μA

Emitter cut-off current

I_EBO

V_EB= 5V, I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE(sat)

V_CE= 10V, I_C= 1mA

V_CE= 10V, I_C=10mA

V_CE=10V, I_C=30mA

I_C=20mA, I_B= 2mA

100

DC current gain

200

Collector-emitter saturation voltage

Base-emitter saturation voltage

0.2

0.9

I_C= 20mA, I_B=2mA

V_CE= 20V, I_C= 10mA,

f=30MHz

Transition frequency

MHz

f_T

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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