Datasheet > MMBTA42

MMBTA42

更新时间： 2024-09-24 22:54:39

品牌	Logo	应用领域
智威 - ZOWIE		晶体晶体管光电二极管高压放大器 PC
页数	文件大小	规格书
3页	60K
描述
HIGH VOLTAGE TRANSISTOR NPN SILICON

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数据手册

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MMBTA42 数据手册

Zowie Technology Corporation

High Voltage Transistor

NPN Silicon

COLLECTOR

BASE

MMBTA42

SOT-23

EMITTER

MAXIMUM RATINGS

Value

300

6.0

Symbol

VCEO

VCBO

VEBO

Unit

Vdc

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Vdc

Emitter-Base Voltage

Vdc

Collector Current-Continuous

500

mAdc

THERMAL CHARACTERISTICS

Max.

Symbol

Unit

Characteristic

Total Device Dissipation FR-5 Board⁽¹⁾TA=25^oC

225

1.8

Derate above 25^oC

mW / ^oC

Thermal Resistance Junction to Ambient

556

^oC / W

Total Device Dissipation Alumina Substrate,⁽²⁾TA=25^oC

300

2.4

Derate above 25^oC

mW / ^oC

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

417

^oC / W

^oC

TJ,TSTG

-55 to +150

DEVICE MARKING

MMBTA42=1D

ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)

Max.

Symbol

Min.

Unit

Characteristic

OFF CHARACTERISTICS

Collector-Emitter Breakdowe Voltage⁽³⁾

( IC= 1.0mAdc, IB=0 )

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

300

6.0

Vdc

Collector-Base Breakdowe Voltage

( IC= 100uAdc, IE=0 )

Emitter - Base Breakdowe Voltage

( IE= 100 uAdc, IC=0 )

Vdc

Collector Cutoff Current

( VCE= 200 Vdc, IE = 0 )

0.1

uAdc

Emitter Cutoff Curretn

( VEB= 6.0 Vdc, IC=0 )

IEBO

(1) FR-5=1.0 0.75 0.062in.

(2) Alumina=0.4 0.3 0.024in. 99.5% alumina.

(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.

REV. : 0

Zowie Technology Corporation

12 3

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