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MMBTA28_2

更新时间： 2024-09-25 10:52:27
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管达林顿晶体管
页数 文件大小 规格书
3页 99K
描述
NPN SURFACE MOUNT DARLINGTON TRANSISTOR

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MMBTA28_2 数据手册

 浏览型号MMBTA28_2的Datasheet PDF文件第2页浏览型号MMBTA28_2的Datasheet PDF文件第3页 
MMBTA28  
NPN SURFACE MOUNT DARLINGTON TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
Epitaxial Planar Die Construction  
Ideal for Low Power Amplification and Switching  
High Current Gain  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 3 and 4)  
SOT-23  
A
Dim  
A
B
C
D
E
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
C
B
C
TOP VIEW  
E
B
D
G
Mechanical Data  
E
•
•
Case: SOT-23  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy  
42 leadframe).  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
H
G
H
J
K
M
•
•
•
•
J
L
K
L
C
M
α
0.085 0.180  
0° 8°  
•
•
•
All Dimensions in mm  
E
B
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current - Continuous  
Power Dissipation (Note 1)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
80  
80  
12  
500  
Unit  
V
V
V
mA  
mW  
°C/W  
°C  
300  
PD  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
417  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Symbol  
Min  
Max  
Unit  
Test Condition  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
80  
12  
80  
⎯
⎯
⎯
V
V
V
nA  
nA  
nA  
V(BR)CBO  
V(BR)EBO  
V(BR)CEO  
ICBO  
ICES  
IEBO  
⎯
⎯
⎯
100  
500  
100  
I
I
C = 100μA IE = 0  
E = 100μA IC = 0  
IC = 100μA IB = 0  
VCB = 60V, IE = 0  
VCE = 10V  
Collector Cutoff Current  
Emitter Cutoff Current  
VEB = 10V, IC = 0  
ON CHARACTERISTICS (Note 2)  
IC  
= 10mA, VCE = 5.0V  
10,000  
10,000  
DC Current Gain  
hFE  
⎯
⎯
IC = 100mA, VCE = 5.0V  
IC = 100mA, IB = 100μA  
IC = 100mA, VCE = 5.0V  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
1.5  
2.0  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
8.0 Typical  
15 Typical  
pF  
pF  
Cobo  
Cibo  
VCB = 10V, f = 1.0MHz, IE = 0  
VEB = 0.5V, f = 1.0MHz, IC = 0  
Input Capacitance  
VCE = 5.0V, IC = 10mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
125  
MHz  
fT  
⎯
Notes:  
1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001 which can be found on  
our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead. Halogen and Antimony Free.  
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30367 Rev. 9 - 2  
1 of 3  
www.diodes.com  
MMBTA28  
© Diodes Incorporated  
123

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