MMBTA28-7

更新时间： 2024-09-24 22:54:39

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管达林顿晶体管
页数	文件大小	规格书
3页	63K
描述
NPN SURFACE MOUNT DARLINGTON TRANSISTOR

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中文翻译

获取价格

数据手册
替代型号

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MMBTA28-7 数据手册

MMBTA28

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features

SOT-23

Epitaxial Planar Die Construction

Ideal for Medium Power Amplification and

Switching

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

High Current Gain

Mechanical Data

TOP VIEW

Case: SOT-23, Molded Plastic

Case Material - UL Flammability Rating

Classification 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

Marking (See Page 2): K6R

Weight: 0.008 grams (approx.)

Ordering & Date Code Information: See Page 2

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Symbol

Maximum Ratings

Characteristic

MMBTA28

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Power Dissipation

500

°C/W

°C

P_d

300

R_qJA

T_j, T_STG

Thermal Resistance, Junction to Ambient

Operating and Storage and Temperature Range

417

-55 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cutoff Current

Symbol

Min

Max

Unit

Test Condition

V_(BR)CBO

V_(BR)EBO

V_(BR)CEO

I_CBO

_C= 100mA I_E= 0

I_E= 100mA I_C= 0

I_C= 100mA I_B= 0

V_CB= 60V, I_E= 0

V_EB= 10V, I_C= 0

100

I_EBO

Emitter Cutoff Current

ON CHARACTERISTICS (Note 2)

I_C

= 10mA, V_CE= 5.0V

10,000

h_FE

DC Current Gain

I_C= 100mA, V_CE= 5.0V

I_C= 100mA, I_B= 100mA

I_C= 100mA, V_CE= 5.0V

V_CE(SAT)

V_BE(SAT)

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

1.5

2.0

V_CB= 10V, f = 1.0MHz, I_E= 0

V_EB= 0.5V, f = 1.0MHz, I_C= 0

C_obo

C_ibo

8.0 Typical

15 Typical

Input Capacitance

V_CE= 5.0V, I_C= 10mA,

f = 100MHz

f_T

Current Gain-Bandwidth Product

125

MHz

Notes:

1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 nch pad layout as shown on Diodes Inc. suggested pad layout

document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

DS30367 Rev. 2 - 2

1 of 3

MMBTA28

www.diodes.com

12 3

中文翻译

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MMBTA28-7 替代型号

型号	品牌	替代类型	描述	数据表
MMBTA28-7-F	DIODES	类似代替	NPN SURFACE MOUNT DARLINGTON TRANSISTOR
MMBTA28	ONSEMI	功能相似	NPN 达林顿晶体管
MMBTA28	FAIRCHILD	功能相似	NPN Darlington Transistor

与MMBTA28-7相关器件

型号	品牌	获取价格	描述	数据表
MMBTA28-7-F	DIODES	获取价格	NPN SURFACE MOUNT DARLINGTON TRANSISTOR
MMBTA28D87Z	ONSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
MMBTA28L	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;
MMBTA28L99Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
MMBTA28L-TP	MCC	获取价格	Small Signal Bipolar Transistor,
MMBTA28L-TP-HF	MCC	获取价格	暂无描述
MMBTA28P	MCC	获取价格	TRANSISTOR 80 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3, BIP Gener
MMBTA28-T	MCC	获取价格	Transistor
MMBTA28TFS	RECTRON	获取价格	Package / Case : SOT-346;Mounting Style : SMD/SMT;Power Rating : 0.2 W;Transistor Polarity
MMBTA28TFS-T	RECTRON	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,

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