Datasheet > MMBTA28TFS

MMBTA28TFS

更新时间： 2024-11-14 18:09:31

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
5页	344K
描述
Package / Case : SOT-346;Mounting Style : SMD/SMT;Power Rating : 0.2 W;Transistor Polarity : NPN;VCEO : 80 V;VCBO : 80 V;VEBO : 12 V;Max Collector Current : 0.5 A;DC Collector/Base Gain hfe Min : 10

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MMBTA28TFS 数据手册

MMBTA28TFS

TRANSISTOR (NPN)

FEATURES

High Current Gain

MARKING: 3S

SOT 346

MAXIMUM RATINGS (T_a=25 unless otherwise noted)

Symbol

V_CBO

Parameter

Collector-Base Voltage

Value

Unit

1. BASE

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

2. EMITTER

3. COLLECTOR

Collector Current

500

200

625

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

P_C

R_ΘJA

T_j

-55~+150

-55 +150

Storage Temperature

T_stg

℃

ELECTRICAL CHARACTERISTICS (T_a=25 unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBO

I_C=100μA, I_E=0

Collector-base breakdown voltage

V_CEO(sus)

V_(BR)EBO

I_CBO

I_C=100μA, V_BE=0

I_E=10μA, I_C=0

Collector-emitter sustain voltage

Emitter-base breakdown voltage

Collector cut-off current

V_CB=60V, I_E=0

0.1

0.5

0.1

μA

I_CES

V_CE=60V, V_BE=0

V_EB=10V, I_C=0

Collector cut-off current

I_EBO

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE=5V, I_C=10mA

V_CE=5V, I_C=100mA

I_C=10mA, I_B=0.01mA

I_C=100mA, I_B=0.1mA

V_CE=5V, I_C=100mA

V_CB=1V, I_E=0, f=1MHz

V_CE=5V,I_C=10mA,

f=100MHz

DC current gain

V_CE(sat)1

V_CE(sat)2

V_BE*

1.2

1.5

Collector-emitter saturation voltage

Base-emitter voltage

C_ob

Collector output capacitance

f_T

125

MHz

Transition frequency

2022-10/17

REV:A

*Pulse test: pulse width ≤300ꢀs,duty cycle≤ 2.0%.

12 3 4 5

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