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MMBTA20LT1G PDF预览

MMBTA20LT1G

更新时间: 2024-11-26 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 416K
描述
小信号 GP NPN

MMBTA20LT1G 数据手册

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Order this document  
by MMBTA20LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
3
1
3
BASE  
1
2
2
EMITTER  
CASE 31808, STYLE 6  
SOT23 (TO236AB)  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
Vdc  
V
V
40  
4.0  
100  
CEO  
Vdc  
EBO  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
mAdc  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance Junction to Ambient  
Total Device Dissipation  
R
JA  
D
P
(2)  
Alumina Substrate,  
T
A
= 25°C  
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
T , T  
J stg  
55 to +150  
MMBTA20LT1 = 1C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
40  
4.0  
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
C
B
EmitterBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 30 Vdc, I = 0)  
I
100  
nAdc  
CBO  
CB  
1. FR5 = 1.0  
E
0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
Thermal Clad is a trademark of the Bergquist Company  
Motorola, Inc. 1996

MMBTA20LT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBTA20LT1 ONSEMI

完全替代

General Purpose Amplifier(NPN Silicon)
MMBT3416LT3G ONSEMI

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General Purpose Amplifier
MMBTA20LT1 MOTOROLA

功能相似

General Purpose Amplifier

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