Datasheet > MMBTA05

MMBTA05

更新时间： 2024-09-15 22:54:39

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
2页	47K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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数据手册

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MMBTA05 数据手册

MMBTA05 / MMBTA06

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

Epitaxial Planar Die Construction

Complementary PNP Types Available

(MMBTA55 / MMBTA56)

Ideal for Medium Power Amplification and

Switching

SOT-23

Dim

Min

0.37

1.19

2.10

0.89

0.45

1.78

2.65

0.013

0.89

0.45

0.076

Max

0.51

1.40

2.50

1.05

0.61

2.05

3.05

0.15

1.10

0.61

0.178

TOP VIEW

Mechanical Data

Case: SOT-23, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

MMBTA05 Marking: K1G, K1H, R1H

MMBTA06 Marking: K1G, R1G

Weight: 0.008 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Symbol

Maximum Ratings

Characteristic

MMBTA05

MMBTA06

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

4.0

500

350

357

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

K/W

°C

P_d

R_qJA

T_j, T_STG

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

-55 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Symbol

Min

Max

Unit

Test Condition

MMBTA05

MMBTA06

V_(BR)CBO

_C= 100mA, I_E= 0

Collector-Emitter Breakdown Voltage

MMBTA05

MMBTA06

_C= 1.0mA, I_B= 0

V_(BR)CEO

V_(BR)EBO

I_CBO

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= 100mA, I_C= 0

4.0

MMBTA05

MMBTA06

V_CB= 60V, I_E= 0

_CB= 80V, I_E= 0

100

Collector Cutoff Current

MMBTA05

MMBTA06

V_CE= 60V, I_BO= 0V

_CE= 80V, I_BO= 0V

I_CES

100

ON CHARACTERISTICS (Note 2)

I_C

= 10mA, V_CE= 1.0V

h_FE

V_CE(SAT)

V_BE(SAT)

DC Current Gain

100

_C= 100mA, V_CE= 1.0V

I_C= 100mA, I_B= 10mA

I_C= 100mA, V_CE= 1.0V

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

0.25

1.2

V_CE= 2.0V, I_C= 10mA,

f = 100MHz

f_T

Current Gain-Bandwidth Product

100

MHz

Note:

1. Valid provided that terminals are kept at ambient temperature.

2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.

DS30037 Rev. C-2

1 of 2

MMBTA05 / MMBTA06

中文翻译

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