Datasheet > MMBTA05_1

MMBTA05_1

更新时间： 2024-11-04 04:39:27

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
3页	112K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMBTA05_1 数据手册

SPICE MODEL: MMBTA05 MMBTA06

MMBTA05 / MMBTA06

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

Complementary PNP Type Available

(MMBTA55 / MMBTA56)

Ideal for Low Power Amplification and Switching

Lead Free/RoHS Compliant (Note 3)

SOT-23

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

•

Qualified to AEC-Q101 Standards for High

Reliability

TOP VIEW

Mechanical Data

•

Case: SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminal Connections: See Diagram

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

MMBTA05 Marking (See Page 3): K1G, K1H

MMBTA06 Marking (See Page 3): K1G

Ordering & Date Code Information: See Page 3

Weight: 0.008 grams (approximate)

•

All Dimensions in mm

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

Symbol

V_CBO

V_CEO

V_EBO

I_C

P_d

R_θJA

MMBTA05

MMBTA06

Unit

4.0

500

300

417

°C/W

°C

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

T_j, T_STG

-55 to +150

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Symbol

Min

Max

Unit

Test Condition

MMBTA05

MMBTA06

MMBTA05

MMBTA06

4.0

V_(BR)CBO

⎯

I_C= 100μA, I_E= 0

Collector-Emitter Breakdown Voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= 1.0mA, I_B= 0

⎯

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= 100μA, I_C= 0

V_CB= 60V, I_E= 0

V_CB= 80V, I_E= 0

V_CE= 60V, I_BO= 0V

V_CE= 80V, I_BO= 0V

MMBTA05

MMBTA06

MMBTA05

MMBTA06

100

⎯

Collector Cutoff Current

I_CES

100

ON CHARACTERISTICS (Note 2)

I_C= 10mA, V_CE= 1.0V

I_C= 100mA, V_CE= 1.0V

I_C= 100mA, I_B= 10mA

DC Current Gain

h_FE

V_CE(SAT)

V_BE(SAT)

100

⎯

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

0.25

1.2

⎯

I_C= 100mA, V_CE= 1.0V

SMALL SIGNAL CHARACTERISTICS

V_CE= 2.0V, I_C= 10mA,

f = 100MHz

Current Gain-Bandwidth Product

f_T

100

MHz

⎯

Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

DS30037 Rev. 10 - 2

1 of 3

MMBTA05 / MMBTA06

www.diodes.com

12 3

中文翻译

下载PDF

与MMBTA05_1相关器件

型号	品牌	获取价格	描述	数据表
MMBTA05_10	WEITRON	获取价格	Driver NPN Transistors
MMBTA05_11	MCC	获取价格	NPN Small Signal General Purpose Amplifier Transistors
MMBTA05_15	TSC	获取价格	300mW, NPN Small Signal Transistor
MMBTA05_15	UTC	获取价格	NPN MMBTA05
MMBTA05-3L	BL Galaxy Electrical	获取价格	60V,0.5A,General Purpose NPN Bipolar Transistor
MMBTA05-7-F	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA05-AU	PANJIT	获取价格	NPN AND PNP HIGH VOLTAGE TRANSISTOR
MMBTA05D87Z	TI	获取价格	NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA05-G	WEITRON	获取价格	暂无描述
MMBTA05G-AL3-R	UTC	获取价格	NPN MMBTA05

与MMBTA05_1相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBTA05_1

MMBTA05_1 数据手册

与MMBTA05_1相关器件

与MMBTA05_1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBTA05_1

MMBTA05_1 数据手册

与MMBTA05_1相关器件

与MMBTA05_1相关文章

您还可以找

您在本页遇到什么问题？