Datasheet > MMBTA05_11

MMBTA05_11

更新时间： 2024-01-03 18:20:06

品牌	Logo	应用领域
美微科 - MCC		晶体放大器晶体管
页数	文件大小	规格书
4页	653K
描述
NPN Small Signal General Purpose Amplifier Transistors

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中文翻译

获取价格

数据手册

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MMBTA05_11 数据手册

MMBTA05

THRU

MMBTA06

M C C

Micro Commercial Components

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Features

•

Epitaxial Planar Die Construction

NPN Small Signal

General Purpose

Amplifier Transistors

Complementary PNP Types Available (MMBTA55/MMBTA56)

Ideal for Medium Power Amplification and Switching.

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

SOT-23

Marking:

MMBTA05:1H/K1H

MMBTA06:1GM/K1G

Maximum Ratings

Symbol

Rating

Unit

V_CEO

Collector-Emitter Voltage

MMBTA05

MMBTA06

V_CBO

Collector-Base Voltage

MMBTA05

4.0

500

300

MMBTA06

V_EBO

I_C

P_D

R_θJA

T_J

Emitter-Base Voltage

Collector Current-Continuous

Power Dissipation*

Thermal Resistance, Junction to Ambient

Operating Junction Temperature

K/W

357

-55 to +150

T_STG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25R Unless Otherwise Specified

Max

DIMENSIONS

Symbol

Parameter

Min

Units

INCHES

DIM

MIN

MAX

MIN

2.80

2.10

1.20

.89

MAX

NOTE

OFF CHARACTERISTICS

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

3.04

2.64

1.40

1.03

2.05

.60

V_(BR)CEO

Collector-Emitter Breakdown Voltage

(I_C=1.0mAdc, I_B=0)

Vdc

MMBTA05

MMBTA06

---

1.78

.45

V_(BR)EBO

I_CBO

Emitter-Base Breakdown Voltage

(I_E=100µAdc, I_C=0)

Collector Cutoff Current

(V_CB=60Vdc, I_E=0) MMBTA05

(V_CB=80Vdc, I_E=0) MMBTA06

Emitter Cutoff Current

.013

.89

.100

1.12

.180

.51

4.0

---

.085

.37

---

0.1

µAdc

Suggested Solder

Pad Layout

I_CES

(V_CE=60Vdc, I_B=0) MMBTA05

(V_CE=80Vdc, I_B=0) MMBTA06

---

0.1

µAdc

.031

.800

ON CHARACTERISTICS

.035

.900

h_FE

DC Current Gain

(V_CE=1.0Vdc, I_C=10mAdc)

(V_CE=1.0Vdc, I_C=100mAdc)

100

---

.079

2.000

inches

V_CE(sat)

V_BE(on)

f_T

Collector-Emitter Saturation Voltage

(I_C=100mAdc, I_B=10mAdc)

Base-Emitter On Voltage

(I_C=100mAdc, IB=10mAdc)

Current-Gain—Bandwidth Product

(I_C=10mAdc, V_CE=2.0Vdc, f=100MHz)

---

0.25

1.2

---

Vdc

MHz

.037

.950

100

.037

.950

* Valid provided that terminals are kept at ambient temperature..

www.mccsemi.com

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Revision: A

2011/01/01

12 3 4

中文翻译

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与MMBTA05_11相关器件

型号	品牌	获取价格	描述	数据表
MMBTA05_15	TSC	获取价格	300mW, NPN Small Signal Transistor
MMBTA05_15	UTC	获取价格	NPN MMBTA05
MMBTA05-3L	BL Galaxy Electrical	获取价格	60V,0.5A,General Purpose NPN Bipolar Transistor
MMBTA05-7-F	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA05-AU	PANJIT	获取价格	NPN AND PNP HIGH VOLTAGE TRANSISTOR
MMBTA05D87Z	TI	获取价格	NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA05-G	WEITRON	获取价格	暂无描述
MMBTA05G-AL3-R	UTC	获取价格	NPN MMBTA05
MMBTA05L	MOTOROLA	获取价格	Transistor
MMBTA05L99Z	TI	获取价格	NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

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