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MMBTA05_09

更新时间： 2024-01-20 04:51:45
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美台 - DIODES 晶体晶体管
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4页 95K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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MMBTA05_09 数据手册

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MMBTA05 / MMBTA06  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
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•
•
•
•
•
Epitaxial Planar Die Construction  
•
•
Case: SOT-23  
Complementary PNP Type Available (MMBTA55 / MMBTA56)  
Ideal for Low Power Amplification and Switching  
Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)  
"Green" Device (Note 4)  
Case Material: Molded Plastic, “Green” Molding Compound,  
Note 4. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating) Solderable per MIL-STD-202, Method 208  
•
•
•
Qualified to AEC-Q101 Standards for High Reliability  
•
•
•
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
3
C
E
2
B
1
Top View  
Device Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
MMBTA05  
MMBTA06  
Unit  
V
60  
60  
80  
80  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
4.0  
V
Collector Current - Continuous (Note 1)  
500  
mA  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 1)  
Symbol  
PD  
Value  
300  
Unit  
mW  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
417  
°C/W  
°C  
Rθ  
TJ, TSTG  
JA  
-55 to +150  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Base Breakdown Voltage  
Symbol  
Min  
Max  
Unit  
Test Condition  
MMBTA05  
MMBTA06  
MMBTA05  
MMBTA06  
60  
80  
60  
80  
V
V(BR)CBO  
⎯
IC = 100μA, IE = 0  
Collector-Emitter Breakdown Voltage  
V
V
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
IC = 1.0mA, IB = 0  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
4.0  
IE = 100μA, IC = 0  
VCB = 60V, IE = 0  
VCB = 80V, IE = 0  
VCE = 60V, IBO = 0V  
VCE = 80V, IBO = 0V  
MMBTA05  
MMBTA06  
100  
nA  
⎯
Collector Cutoff Current  
MMBTA05  
MMBTA06  
100  
nA  
ICES  
⎯
ON CHARACTERISTICS (Note 2)  
IC  
= 10mA, VCE = 1.0V  
DC Current Gain  
100  
hFE  
VCE(SAT)  
VBE(SAT)  
⎯
⎯
IC = 100mA, VCE = 1.0V  
IC = 100mA, IB = 10mA  
IC = 100mA, VCE = 1.0V  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Current Gain-Bandwidth Product  
0.25  
1.2  
V
V
⎯
⎯
100  
MHz  
fT  
⎯
VCE = 2.0V, IC = 10mA, f = 100MHz  
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead. Halogen and Antimony Free.  
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code  
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 4  
www.diodes.com  
April 2009  
© Diodes Incorporated  
MMBTA05 / MMBTA06  
Document number: DS30037 Rev. 12 - 2  
1234

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