Datasheet > MMBTA05_15

MMBTA05_15

更新时间： 2024-02-18 19:40:49

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	749K
描述
300mW, NPN Small Signal Transistor

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中文翻译

获取价格

数据手册

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MMBTA05_15 数据手册

MMBTA05

Taiwan Semiconductor

Small Signal Product

300mW, NPN Small Signal Transistor

FEATURES

- Epitaxial planar die construction

- Surface device type mounting

- Moisture sensitivity level 1

- Pb free version and RoHS compliant

- Packing code with suffix "G" means

green compound (halogen-free)

SOT-23

MECHANICAL DATA

- Case: SOT- 23, molded plastic

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260^oC/10s

- Weight: 0.008g (approximately)

- Marking Code: 1H

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

UNIT

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

0.5

Collector Current- Continuous

Collector Power Dissipation

Junction Temperature

P_C

300

°C

T_J

150

Storage Temperature Range

T_STG

- 55 to +150

PARAMETER

MIN

MAX

SYMBOL

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

UNIT

at I_C=100uA, I_E=0

at I_C=1mA, I_B=0

at I_E=100uA, I_C=0

at V_CB=60V, I_E=0

at V_CE=60V, I_B=0

at V_EB=3V, I_C=0

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Cutoff Current

0.1

400

μA

Collector Cutoff Current

I_CEO

Emitter Cutoff Current

I_EBO

at V_CE=1V, I_C=10mA

h_FE

100

DC Current Gain

at V_CE=1V, I_C=100mA

at I_C=50mA, I_B=5mA

at V_CE=1V, I_C=100mA

h_FE

Collector Emitter

Saturation Voltage

V_CE(sat)

0.25

Base-emitter Voltage

V_BE

f_T

1.2

at V_CE=2V, I_C=10mA, f=100MHz

100

Transition Frequency

MHz

Document Number: DS_S0000015

Version: B15

12 3 4

中文翻译

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