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MMBT6521LT1 PDF预览

MMBT6521LT1

更新时间: 2024-02-03 04:47:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
7页 110K
描述
Amplifier Transistor NPN Silicon

MMBT6521LT1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.99最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):300JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MMBT6521LT1 数据手册

 浏览型号MMBT6521LT1的Datasheet PDF文件第2页浏览型号MMBT6521LT1的Datasheet PDF文件第3页浏览型号MMBT6521LT1的Datasheet PDF文件第4页浏览型号MMBT6521LT1的Datasheet PDF文件第5页浏览型号MMBT6521LT1的Datasheet PDF文件第6页浏览型号MMBT6521LT1的Datasheet PDF文件第7页 
MMBT6521LT1  
Amplifier Transistor  
NPN Silicon  
Features  
Pb−Free Package is Available  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
25  
Unit  
Vdc  
1
V
CEO  
V
CBO  
V
EBO  
BASE  
40  
Vdc  
4.0  
Vdc  
2
EMITTER  
Collector Current — Continuous  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
3
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board  
P
D
1
(Note 1) @T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
2
Thermal Resistance, Junction−to−Ambient  
R
556  
°C/W  
q
JA  
SOT23 (TO236)  
CASE 31808  
STYLE 6  
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) @T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
−55 to +150  
stg  
MARKING DIAGRAM  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
RO M G  
G
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
1
RO  
M
= Specific Device Code  
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT6521LT1  
SOT−23  
3000/Tape & Reel  
MMBT6521LT1G SOT−23  
(Pb−Free)  
3000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 4  
MMBT6521LT1/D  
 

MMBT6521LT1 替代型号

型号 品牌 替代类型 描述 数据表
MMBT6521LT1G ONSEMI

完全替代

Amplifier Transistor NPN Silicon

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