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MMBT6589T1G PDF预览

MMBT6589T1G

更新时间: 2024-11-27 04:39:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关小信号双极晶体管光电二极管便携式
页数 文件大小 规格书
5页 63K
描述
High Current Surface Mount PNP Silicon Switching Transistor for Switching Transistor for Portable Applications

MMBT6589T1G 技术参数

是否无铅:不含铅生命周期:End Of Life
零件包装代码:TSOP包装说明:LEAD FREE, CASE 318G-02, TSOP-6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.35
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.925 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MMBT6589T1G 数据手册

 浏览型号MMBT6589T1G的Datasheet PDF文件第2页浏览型号MMBT6589T1G的Datasheet PDF文件第3页浏览型号MMBT6589T1G的Datasheet PDF文件第4页浏览型号MMBT6589T1G的Datasheet PDF文件第5页 
MMBT6589T1  
High Current Surface  
Mount PNP Silicon  
Switching Transistor for  
Load Management in  
Portable Applications  
http://onsemi.com  
30 VOLTS, 2.0 AMPS  
PNP TRANSISTOR  
Features  
Pb−Free Package is Available  
COLLECTOR  
1, 2, 5  
MAXIMUM RATINGS (T = 25°C)  
A
3
BASE  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Symbol  
Max  
−30  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
A
V
CEO  
V
CBO  
V
EBO  
6
EMITTER  
−50  
−5.0  
−1.0  
−2.0  
3
2
1
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
I
CM  
4
5
6
ESD  
HBM Class 3  
MM Class C  
THERMAL CHARACTERISTICS  
Characteristic  
TSOP−6  
CASE 318G  
STYLE 7  
Symbol  
Max  
Unit  
Total Device Dissipation T = 25°C  
P
540  
4.4  
mW  
mW/°C  
A
D
Derate above 25°C  
(Note 1)  
MARKING DIAGRAM  
Thermal Resistance, Junction−to−Ambient  
R
230  
°C/W  
q
JA  
(Note 1)  
Total Device Dissipation T = 25°C  
P
925  
7.4  
mW  
mW/°C  
A
D
Derate above 25°C  
(Note 2)  
G3 M G  
G
Thermal Resistance, Junction−to−Ambient  
R
135  
°C/W  
q
JA  
(Note 2)  
1
Total Device Dissipation  
(Single Pulse < 10 s)  
P
1.3  
W
Dsingle  
(Note 2)  
(Note 3)  
G3 = Specific Device Code  
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Junction and Storage Temperature  
Range  
T , T  
−55 to +150  
°C  
J
stg  
*Date Code orientation may vary depending  
upon manufacturing location.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
1. FR4 @ Minimum Pad  
2. FR4 @ 1.0 X 1.0 inch Pad  
3. ref: Figure 8  
MMBT6589T1  
MMBT6589T1G  
TSOP−6  
3000/Tape & Reel  
3000/Tape & Reel  
TSOP−6  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 1  
MMBT6589T1/D  
 

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