Datasheet > MMBT7002D

MMBT7002D

更新时间： 2024-11-21 14:53:27

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
3页	214K
描述
小信号金氧半電晶體

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MMBT7002D 数据手册

MMBT7002D

N-Channel Enhancement Mode Field Effect Transistor

Features

• High density cell design for low R_DS(ON)

• Voltage controlled small signal switching

• High saturation current capability

• High speed switching

1. Gate 2. Source 3. Gate

4. Drain 5. Source 6. Drain

SOT-26 Plastic Package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_DSS

Value

Unit

Drain-Source Voltage

Drain-Gate Voltage (R_GS≤ 1 MΩ)

V_DGR

Gate-Source Voltage

-Continuous

-Non Repetitive (tp < 50 µs)

-Continuous

-Pulsed

± 20

± 40

115

800

V_GSS

I_D

Maximum Drain Current

Total Power Dissipation

P_tot

200

Operating and Storage Temperature Range

T_j, T_stg

- 55 to + 150

℃

Characteristics at T_a= 25℃

Parameter

Symbol

BV_DSS

Min.

Max.

Unit

Drain Source Breakdown Voltage

at I_D= 10 µA

Zero Gate Voltage Drain Current

at V_DS= 60 V

Gate-Body Leakage Current

at V_GS= ± 20 V

Gate Threshold Voltage

at V_DS= V_GS, I_D= 250 µA

On-State Drain Current

at V_GS= 10 V, V_DS= 7.5 V

µA

I_DSS

I_GSS

± 100

2.5

V_GS(th)

I_D(ON)

500

Drain-Source On-Voltage

at V_GS= 10 V, I_D= 500 mA

at V_GS= 5 V, I_D= 50 mA

3.75

1.5

V_DS(ON)

Static Drain-Source On-Resistance

at V_GS= 10 V, I_D= 500 mA

Forward Transconductance

at V_DS= 10 V, I_D= 200 mA

Input Capacitance

at V_DS= 25 V, f = 1 MHz

Output Capacitance

at V_DS= 25 V, f = 1 MHz

Reverse Transfer Capacitance

at V_DS= 25 V, f = 1 MHz

R_DS(ON)

g_FS

7.5

Ω

C_iss

C_oss

C_rss

t_on

Turn-On Time

at V_DD= 30 V, R_L= 150 Ω, I_D= 0.2 A, V_GS= 10V, R_GEN= 25Ω

Turn-Off Time

at V_DD= 30 V, R_L= 150 Ω, I_D= 0.2 A, V_GS= 10V, R_GEN= 25Ω

t_off

Dated: 04/10/2018 Rev:01

12 3

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