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MMBT3906K_NL PDF预览

MMBT3906K_NL

更新时间: 2024-11-12 20:36:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管晶体管
页数 文件大小 规格书
4页 118K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, SOT-23, 3 PIN

MMBT3906K_NL 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:LEAD FREE, SOT-23, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.03
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):300 ns
最大开启时间(吨):70 nsBase Number Matches:1

MMBT3906K_NL 数据手册

 浏览型号MMBT3906K_NL的Datasheet PDF文件第2页浏览型号MMBT3906K_NL的Datasheet PDF文件第3页浏览型号MMBT3906K_NL的Datasheet PDF文件第4页 
MMBT3906K  
PNP Epitaxial Silicon Transistor  
General Purpose Transistor  
Marking  
3
2AK  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
-40  
Units  
V
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCEO  
VEBO  
IC  
-40  
V
-5  
V
-200  
mA  
mW  
°C  
PC  
Collector Power Dissipation  
350  
TJ, TSTG  
Operating Junction and Storage Temperature Range  
-55 ~ 150  
Electrical Characteristics Ta=25°C unless otherwise noted  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICEX  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage *  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
-40  
-40  
-5  
Max. Units  
IC = -10µA, IE = 0  
V
V
V
IC = -1.0mA, IB = 0  
IE = 10µA, IC = 0  
VCE = -30V, VEB = -3V  
-50  
nA  
hFE  
DC Current Gain *  
VCE = -1V, IC = -0.1mA  
VCE = -1V, IC = -1mA  
VCE = -1V, IC = -10mA  
VCE = -1V, IC = -50mA  
VCE = -1V, IC = -100mA  
60  
80  
100  
60  
300  
30  
VCE (sat)  
VBE (sat)  
Collector-Emitter Saturation Voltage *  
Base-Emitter Saturation Voltage *  
IC = -10mA, IB = -1mA  
IC = -50mA, IB = -5.0mA  
-0.25  
-0.4  
V
V
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
-0.65  
250  
-0.85  
-0.95  
V
V
fT  
Current Gain Bandwidth Product  
Output Capacitance  
Noise Figure  
IC = -10mA, VCE = -20V, f = 100MHz  
VCB= -5V, IE=0, f=1.0MHz  
MHz  
pF  
Cob  
NF  
4.5  
4
IC = -100µA, VCE = -5V, RS = 1KΩ  
dB  
f = 10Hz to 15.7KHz  
tON  
Turn On Time  
VCC = -3V, VBE = -0.5V  
IC = -10mA, IB1 = -1mA  
70  
ns  
ns  
tOFF  
Turn Off Time  
VCC = -3V, IC = -10mA, IB1 = IB2 = -1mA  
300  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
©2006 Fairchild Semiconductor Corporation  
MMBT3906K Rev. B  
1
www.fairchildsemi.com  

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