Datasheet > MMBT3906LT1

MMBT3906LT1

更新时间： 2024-09-24 12:06:03

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管光电二极管
页数	文件大小	规格书
2页	155K
描述
SOT-23 TRANSISTOR

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中文翻译

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数据手册

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MMBT3906LT1 数据手册

RoHS

M M B T 3 9 0 6 L T 1

SOT-23 TRANSISTOR

Dimensions(Unit:mm)

SOT-23

2.3±0.2

GENERAL PURPOSE TRANSISTOR

Complementary Pair with MMBT3904LT1.

Collector Dissipation:Pc=225mW

Collector-Emitter Voltage:VCEO=-40V

PNP Epitaxial Silicon Transistor

1.3±0.2

0.5Ref.

Marking

0.38Ref.

MINO.1

0.01-0.10

1.EMITTER

2.BASE

3.COLLECTOR

Tolerance:0.1mm

(Ta=25^oC)

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

EBO

-40

Emitter-Base Voltage

Collector Current

-5

-200

225

Collector Dissipation

Junction Temperature

Storage Temperature

^OC

150

stg

-50~150

(Ta=25^oC)

Electrical Characteristics

Parameter

Symbol MIN. TYP.MAX. Unit

Condition

-40

-5

BVCEO

BVCBO

BVEBO

=-1mA I

=-10 A I

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter-Base Cutoff Current

DC Current Gain

CEO

-50

CB=-30V, VEB=-3V

EBO

CB=-3V, I

CE=-1V, I

FE1

FE2

FE3

FE4

FE5

=-0.1mA

=-1mA

=-10mA

=-50mA

=-100mA

DC Current Gain

300

100

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

CE(sat)

BE(sat)

-0.4

-0.25

-0.95

=-50mA, I

=-10mA, I

=-50mA, I

=-5mA

=-1mA

=-5mA

WEJ ELECTRONIC CO.,LTD

Base-Emitter Saturation Voltage

Output Capacitance

BE(sat)

-0.85

4.5

=-10mA, I

CE=-5V, I =0,f=1MHz

CE=-20V, I =-10mA,f=100MHz

=-1mA

Current Gain-Bandwidth Product

250

MHz

Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC

Pulse Test: Pulse Width 300uS Duty cycle 2%

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

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