Datasheet > MMBT3906L

MMBT3906L

更新时间： 2024-11-13 17:01:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	323K
描述
40V,0.1A,General Purpose PNP Bipolar Transistor

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MMBT3906L 数据手册

Production Specification

PNP General Purpose Transistor

MMBT3906L

FEATURES

Lead-free



Epitaxial planar die construction.

Complementary NPN type available

(MMBT3904L).



Collector Current Capability I_CM=-200mA.

Low Voltage(Max:-40V).

APPLICATIONS



Ideal for medium power amplification and switching.

DFN1006-3

ORDERING INFORMATION

Type No.

Marking

Package Code

MMBT3906L□

DFN1006-3

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

open emitter

open base

Value

-40

UNIT

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

-40

open collector

-6

-100

°C

I_CM

-200

I_BM

-100

P_tot

total power dissipation

storage temperature

Tamb≤25°C

150

T_j, T_stg

-55 to +150

Note Transistor mounted on an FR4 printed-circuit board.

STM0369A

www.gmesemi.com

12 3 4

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