SMD Type
Transistors
PNP Transistors
MMBT3906 (KMBT3906)
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
Features
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
● Complementary toMMBT3904
+0.1
-0.2
1.9
●
Marking: 2A
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
-40
Unit
V
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
-40
-5
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
-0.2
A
PC
0.2
W
TJ
150
℃
Storage Temperature range
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
-40
-40
-6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 μA, I
Ic= -1 mA, I =0
= -100μA, I
E=0
B
I
E
C=0
I
CBO
CEX
EBO
V
V
V
CB= -40 V , I
E
=0
-100
-50
nA
V
I
CE=- 30 V , VEB(off)=3V
EB= -5V , I =0
I
C
-100
-0.2
I
I
I
I
C
=-10 mA, I
B
=- 1mA
= -5mA
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
C
C
C
=-50 mA, I
B
-0.3
= -10 mA, I
= -50 mA, I
B
= -1mA
= -5mA
-0.65
-0.85
-0.95
300
V
B
V
V
V
V
CE= -1V, I
CE= -1V, I
CE= -1V, I
C= -10mA
C=-50mA
C=-100mA
100
60
hfe(1)
hfe(2)
hfe(3)
DC current gain
30
Delay time
t
d
CC=-3.0V,VBE=0.5V
=-10mA,IB1=-1.0mA
35
35
Rise time
t
r
I
C
ns
Storage time
t
s
V
CC=-3.0V,I
C=-10mA
225
75
Fall time
t
f
IB1=IB2=-1.0mA
Collector input capacitance
C
ib
V
V
EB= -0.5V, I
CB= -5V, I = 0,f=1MHz
CE= -20V, I = -10mA,f=100MHz
E
= 0,f=1MHz
10
pF
4.5
Collector output capacitance
Transition frequency
Cob
T
E
250
MHz
f
V
C
■ Classification of hfe(1)
MMBT3906-L MMBT3906-H
100-200 200-300
Type
MMBT3906
Range
100-300
1
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