Datasheet > MMBT3906L

MMBT3906L

更新时间： 2024-09-23 22:54:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	105K
描述
General Purpose Transistor(NPN Silicon)

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中文翻译

获取价格

数据手册
替代型号

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MMBT3906L 数据手册

MMBT3904LT1

Preferred Device

General Purpose Transistor

NPN Silicon

Features

• Pb−Free Packages are Available

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Symbol Value

Unit

Vdc

CEO

CBO

EBO

BASE

Vdc

Emitter−Base Voltage

6.0

200

Vdc

Collector Current − Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

EMITTER

Symbol

Max

Unit

MARKING

DIAGRAM

Total Device Dissipation FR−5 Board

225

(Note 1) T = 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

1AM

Thermal Resistance Junction to Ambient

Total Device Dissipation

SOT−23 (TO−236)

CASE 318

Alumina Substrate, (Note 2) T = 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Style 6

Thermal Resistance Junction−to−Ambient

Junction and Storage Temperature

417

1AM

= Specific Device Code

T , T

−55 to

+150

stg

ORDERING INFORMATION

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

†

Device

MMBT3904LT1

Package

Shipping

SOT−23

3000 / Tape & Reel

MMBT3904LT1G SOT−23

MMBT3904LT3

SOT−23 10000 / Tape & Reel

MMBT3904LT3G SOT−23 10000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

February, 2004 − Rev. 5

MMBT3904LT1/D

12 3 4 5 6

中文翻译

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MMBT3906L 替代型号

型号	品牌	替代类型	描述	数据表
MMBT3906LT3G	ONSEMI	类似代替	General Purpose Transistor(PNP Silicon)
SST3904T116	ROHM	功能相似	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SST3, 3

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