Datasheet > MMBF0201

MMBF0201

更新时间： 2024-09-26 22:46:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
6页	182K
描述
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

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数据手册

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MMBF0201 数据手册

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by MMBF0201N/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–CHANNEL

ENHANCEMENT–MODE

TMOS MOSFET

These miniature surface mount MOSFETs utilize Motorola’s High

Cell Density, HDTMOS process. Low r

assures minimal

DS(on)

power loss and conserves energy, making this device ideal for use

in small power management circuitry. Typical applications are

dc–dc converters, power management in portable and battery–

powered products such as computers, printers, PCMCIA cards,

cellular and cordless telephones.

= 1.0 OHM

DS(on)

•

Low r

Provides Higher Efficiency and Extends Battery Life

Miniature SOT–23 Surface Mount Package Saves Board Space

DS(on)

3 DRAIN

CASE 318–07, Style 21

SOT–23 (TO–236AB)

GATE

2 SOURCE

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Symbol

Value

Unit

Vdc

DSS

Gate–to–Source Voltage — Continuous

± 20

Drain Current — Continuous @ T = 25°C

300

240

750

mAdc

Drain Current — Continuous @ T = 70°C

Drain Current — Pulsed Drain Current (t ≤ 10 µs)

(1)

Total Power Dissipation @ T = 25°C

225

– 55 to 150

625

°C

Operating and Storage Temperature Range

Thermal Resistance — Junction–to–Ambient

T , T

stg

°C/W

°C

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

DEVICE MARKING

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

3000

MMBF0201NLT1

MMBF0201NLT3

7″

12 mm embossed tape

13″

10,000

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₅Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6

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与MMBF0201相关器件

型号	品牌	获取价格	描述	数据表
MMBF0201N	MOTOROLA	获取价格	N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MMBF0201NLT1	ONSEMI	获取价格	Power MOSFET 300 mAmps, 20 Volts
MMBF0201NLT1	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
MMBF0201NLT1_06	ONSEMI	获取价格	Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23
MMBF0201NLT1G	ONSEMI	获取价格	Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23
MMBF0201NLT1G	TYSEMI	获取价格	N-CHANNEL SOT-23
MMBF0201NLT3	ONSEMI	获取价格	300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, CASE 318-08, 3 PIN
MMBF0201NLT3	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
MMBF0202PLT1	ONSEMI	获取价格	Power MOSFET 300 mAmps, 20 Volts
MMBF0202PLT1	MOTOROLA	获取价格	P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET