MJE800TC

更新时间： 2024-11-03 13:11:35

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管
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6页	259K
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MJE800TC 数据手册

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by MJE700/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general–purpose amplifier and low–speed switching applications.

•

High DC Current Gain —

= 2000 (Typ) @ I = 2.0 Adc

Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage

Multiplication

Choice of Packages —

MJE700 and MJE800 series

T0220AB, MJE700T and MJE800T

MAXIMUM RATINGS

4.0 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

MJE702

MJE703

MJE802

MJE803

MJE700,T

MJE800,T

Rating

Symbol

Unit

Collector–Emitter Voltage

CEO

Vdc

40 WATT

50 WATT

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

Vdc

Adc

5.0

4.0

0.1

Base Current

CASE 77

TO–220

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.32

0.40

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

stg

–55 to +150

CASE 77–08

TO–225AA TYPE

MJE700–703

MJE800–803

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

C/W

θJC

CASE 77

TO–220

3.13

2.50

TO–220AB

TO–126

CASE 221A–06

TO–220AB

MJE700T

MJE800T

100

125

150

, CASE TEMPERATURE (°C)

Figure 1. Power Derating

REV 3

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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与MJE800TC相关器件

型号	品牌	获取价格	描述	数据表
MJE800TD1	MOTOROLA	获取价格	4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE800TL	MOTOROLA	获取价格	4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE800TN	MOTOROLA	获取价格	4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE800TS	MOTOROLA	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
MJE800TT	MOTOROLA	获取价格	4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE800TU	MOTOROLA	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
MJE800TU2	MOTOROLA	获取价格	4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE800TUA	MOTOROLA	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
MJE800TW	MOTOROLA	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
MJE801	FAIRCHILD	获取价格	Monolithic Construction With Built-in Base- Emitter Resistors