Datasheet > MJE801

MJE801

更新时间： 2024-11-04 14:53:07

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
18页	502K
描述
4A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

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中文翻译

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技术参数
数据手册

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MJE801 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	not_compliant	风险等级：	5.14
Is Samacsys：	N	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

MJE801 数据手册

MJE700 THRU MJE703 PNP

MJE800 THRU MJE803 NPN

www.centralsemi.com

COMPLEMENTARY

POWER DARLINGTON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MJE700, MJE800

series devices are medium power complementary

silicon Darlington transistors designed for audio amplifier

applications as complementary output devices.

MARKING: FULL PART NUMBER

TO-126 CASE

MJE700

MJE701

MJE800

MJE801

MJE702

MJE703

MJE802

MJE803

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

4.0

100

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

3.13

°C

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=Rated V

=5.0V

100

μA

CBO

CEO

EBO

CBO

CEO

, T =100°C

500

100

2.0

μA

I =50mA (MJE702,703,802,803)

CEO

I =50mA (MJE700,701,800,801)

I =1.5A, I =30mA (MJE700,702,800,802)

2.5

2.8

3.0

2.5

3.0

CE(SAT)

BE(ON)

I =2.0A, I =40mA (MJE701,703,801,803)

I =4.0A, I =40mA

=3.0V, I =1.5A (MJE700,702,800,802)

=3.0V, I =2.0A (MJE701,703,801,803)

=3.0V, I =4.0A

=3.0V, I =1.5A (MJE700,702,800,802) 750

=3.0V, I =2.0A (MJE701,703,801,803) 750

=3.0V, I =4.0A

100

1.0

=3.0V, I =1.5A, f=1.0MHz

MHz

R2 (23-January 2014)

12 3 4 5 6 7...18

中文翻译

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与MJE801相关器件

型号	品牌	获取价格	描述	数据表
MJE801LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
MJE801STU	FAIRCHILD	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
MJE801T	MOSPEC	获取价格	POWER TRANSISTORS(4.0A,60-80V,40W)
MJE801T	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
MJE801T	CENTRAL	获取价格	4A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
MJE801T	NJSEMI	获取价格	Trans Darlington NPN 60V 4A 3-Pin(3+Tab) TO-220 Box
MJE801TLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
MJE802	STMICROELECTRONICS	获取价格	SILICON NPN POWER DARLINGTON TRANSISTORS
MJE802	FAIRCHILD	获取价格	Monolithic Construction With Built-in Base- Emitter Resistors
MJE802	MOTOROLA	获取价格	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT