生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.63 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 60 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 750 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 40 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 1 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE800TUA | MOTOROLA |
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
MJE800TW | MOTOROLA |
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
MJE801 | FAIRCHILD |
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Monolithic Construction With Built-in Base- Emitter Resistors | |
MJE801 | ISC |
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Silicon NPN Power Transistors | |
MJE801 | SAVANTIC |
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Silicon NPN Power Transistors | |
MJE801 | CENTRAL |
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4A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | |
MJE801 | NJSEMI |
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Trans Darlington NPN 60V 4A 3-Pin(3+Tab) TO-126 | |
MJE801LEADFREE | CENTRAL |
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
MJE801STU | FAIRCHILD |
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
MJE801T | MOSPEC |
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POWER TRANSISTORS(4.0A,60-80V,40W) |