MJE800T PDF预览

MJE800T

更新时间: 2025-09-20 22:33:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 259K
描述
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

MJE800T 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.13其他特性:LEADFORM OPTIONS ARE AVAILABLE
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:60 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):100JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:50 W
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):1 MHz
VCEsat-Max:3 VBase Number Matches:1

MJE800T 数据手册

 浏览型号MJE800T的Datasheet PDF文件第1页浏览型号MJE800T的Datasheet PDF文件第2页浏览型号MJE800T的Datasheet PDF文件第3页浏览型号MJE800T的Datasheet PDF文件第5页浏览型号MJE800T的Datasheet PDF文件第6页 
PNP  
NPN  
MJE700, T Series  
MJE800, T Series  
6.0 k  
6.0 k  
V
= 3.0 V  
V
= 3.0 V  
CE  
T = 125  
°C  
CE  
T
= 125  
°
C
J
J
4.0 k  
3.0 k  
4.0 k  
3.0 k  
25°C  
2.0 k  
2.0 k  
25°C  
55°C  
55°C  
1.0 k  
800  
1.0 k  
800  
600  
600  
400  
300  
400  
300  
0.04 0.06  
0.1  
0.2  
0.4 0.6  
1.0  
2.0  
4.0  
0.04 0.06  
0.1  
0.2  
0.4 0.6  
1.0  
2.0  
4.0  
100  
4.0  
I
, COLLECTOR CURRENT (AMP)  
I
, COLLECTOR CURRENT (AMP)  
C
C
Figure 10. DC Current Gain  
3.4  
3.0  
2.6  
3.4  
T
= 25  
°
C
T = 25°C  
J
J
I
=
C
3.0  
0.5 A  
I
=
C
1.0 A  
2.0 A  
4.0 A  
1.0 A  
2.0 A  
4.0 A  
0.5 A  
2.6  
2.2  
1.8  
2.2  
1.8  
1.4  
1.4  
1.0  
0.6  
1.0  
0.6  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
0.1  
0.2  
0.5  
1.0  
I , BASE CURRENT (mA)  
B
2.0  
5.0  
10  
20  
50  
I
, BASE CURRENT (mA)  
B
Figure 11. Collector Saturation Region  
2.2  
1.8  
1.4  
2.2  
T
= 25°C  
T = 25°C  
J
J
1.8  
1.4  
V
@ I /I = 250  
C B  
V
@ I /I = 250  
BE(sat)  
BE(sat) C B  
V
@ V = 3.0 V  
CE  
BE  
V
@ V = 3.0 V  
CE  
BE  
1.0  
0.6  
0.2  
1.0  
0.6  
0.2  
V
@ I /I = 250  
C B  
V
@ I /I = 250  
CE(sat)  
CE(sat)  
C B  
0.04 0.06  
0.1  
0.2  
0.4 0.6  
1.0  
2.0  
4.0  
0.04 0.06  
0.1  
0.2  
0.4 0.6  
1.0  
2.0  
I
, COLLECTOR CURRENT (AMP)  
I , COLLECTOR CURRENT (AMP)  
C
C
Figure 12. “On” Voltages  
4
Motorola Bipolar Power Transistor Device Data  

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