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MJE800T

更新时间： 2025-09-20 22:33:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 259K
描述
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

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中文翻译

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MJE800T 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.13其他特性：LEADFORM OPTIONS ARE AVAILABLE
外壳连接：COLLECTOR最大集电极电流 (IC)：4 A
集电极-发射极最大电压：60 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：100JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN功耗环境最大值：50 W
认证状态：Not Qualified表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：1 MHz
VCEsat-Max：3 VBase Number Matches：1

MJE800T 数据手册

 浏览型号MJE800T的Datasheet PDF文件第1页浏览型号MJE800T的Datasheet PDF文件第2页浏览型号MJE800T的Datasheet PDF文件第4页浏览型号MJE800T的Datasheet PDF文件第5页浏览型号MJE800T的Datasheet PDF文件第6页 
1.0  
0.7  
D = 0.5  
0.2  
0.5  
0.3  
0.2  
P
(pk)  
0.1  
θ
θ
(t) = r(t) θ  
= 3.12  
JC  
JC  
JC  
°C/W MAX  
0.05  
0.1  
0.07  
0.05  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
0.01  
t
1
READ TIME AT t  
t
1
2
T
– T = P  
θ
(t)  
J(pk)  
C
(pk) JC  
DUTY CYCLE, D = t /t  
0.03  
0.02  
SINGLE PULSE  
1 2  
0.01  
0.01  
0.02 0.03 0.05  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
20  
30  
50  
100  
200 300 500  
1000  
t, TIME (ms)  
Figure 5. Thermal Response (MJE700, 800 Series)  
ACTIVE–REGION SAFE–OPERATING AREA  
10  
10  
7.0  
7.0  
5.0 ms  
1.0 ms  
100  
µs  
5.0 ms  
5.0  
5.0  
1.0 ms  
100 µs  
3.0  
2.0  
3.0  
2.0  
dc  
dc  
C
T
= 150  
°
C
T = 150°  
J
1.0  
0.7  
0.5  
J
1.0  
0.7  
0.5  
BONDING WIRE LIMITED  
THERMALLY LIMITED  
BONDING WIRE LIMITED  
THERMALLY LIMITED  
@ T = 25  
SECOND BREAKDOWN LIMITED  
°
C (SINGLE PULSE)  
@ T = 25°C (SINGLE PULSE)  
SECOND BREAKDOWN LIMITED  
C
C
0.3  
0.2  
0.3  
0.2  
MJE702, 703  
MJE700  
MJE802, 803  
MJE800  
0.1  
5.0  
0.1  
7.0  
10  
20  
30  
50  
70  
100  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
CE  
Figure 6. MJE700 Series  
Figure 7. MJE800 Series  
There are two limitations on the power handling ability of a  
transistor: average junction temperature and second break-  
The data of Figures 6 and 7 are based on T  
= 150 C;  
J(pk)  
is variable depending on conditions. Second breakdown  
T
C
down. Safe operating area curves indicate I – V  
limits of  
pulse limits are valid for duty cycles to 10% provided T  
C
CE  
J(pk)  
may be calculated from the data in Figure 4  
the transistor that must be observed for reliable operation;  
i.e., the transistor must not be subjected to greater dissipa-  
tion than the curves indicate.  
< 150 C. T  
J(pk)  
or 5. At high case temperatures, thermal limitations will re-  
duce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
10  
10  
100  
µs  
100 µs  
5.0  
2.0  
5.0  
2.0  
1.0 ms  
5.0 ms  
1.0 ms  
5.0 ms  
dc  
dc  
1.0  
0.5  
1.0  
0.5  
T
= 150  
°
C
T = 150°C  
J
BONDING WIRE LIMITED  
THERMALLY LIMITED  
J
BONDING WIRE LIMITED  
THERMALLY LIMITED  
@ T = 25  
SECOND BREAKDOWN LIMITED  
°
C (SINGLE PULSE)  
@ T = 25  
SECOND BREAKDOWN LIMITED  
°
C (SINGLE PULSE)  
C
C
0.2  
0.1  
0.2  
0.1  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
CE  
CE  
Figure 8. MJE700T  
Figure 9. MJE800T  
3
Motorola Bipolar Power Transistor Device Data  
123456

中文翻译

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